RB058RSM10S
Schottky Barrier Diode
Data sheet
● Outline
VR
100
V
Io
3
A
IFSM
120
A
● Features
● Inner Circuit
High reliability
Power mold type
Ultra low IR
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
12
Quantity(pcs)
4000
Taping Code
TL1
Marking
RB058RSM10S
Switching power supply
Freewheel diode
Reverse polarity protection
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V RM
Duty≦0.5
100
V
Reverse voltage
VR
Reverse direct voltage
100
V
Average rectified forward current
Io
60Hz half sin waveform,resistive load,
Tc=170℃Max.
3
A
IFSM
60Hz half sin waveform,non-repetitive,
Ta=25℃
120
A
Tj
-
175
℃
Tstg
-
-55 ~ 175
℃
Peak forward surge current
Junction temperature(1)
Storage temperature
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
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免费人工找货- 国内价格
- 10+5.92235
- 50+5.62660
- 100+5.06321
- 500+4.30404
- 2000+3.44282
- 国内价格
- 50+5.62660
- 100+5.06321
- 500+4.30404
- 2000+3.44282
- 国内价格 香港价格
- 1+6.658901+0.80556
- 10+4.9901310+0.60368
- 50+3.3294550+0.40278
- 100+2.66518100+0.32242
- 500+2.49506500+0.30184
- 1000+2.397851000+0.29008
- 2000+2.365452000+0.28616
- 4000+2.349254000+0.28420
- 国内价格
- 5+8.38540
- 50+5.59026
- 100+5.33536
- 200+5.31778
- 500+4.51792
- 1000+4.26302
- 2000+4.23665