RB060L-40_11

Data Sheet Schottky barrier diode RB060L-40  Applications Rectifying small power  Dimensions (Unit : mm)  Land size figure (Unit : mm) 2.0 2.0 2.6±0.2  Features 1)Small power mold type. (PMDS) 2) Low IR 3) High reliability  Construction Silicon epitaxial planar ① ② 0.1±0.02 　　　 0.1 5.0±0.3 3 6 4.5±0.2 1.2±0.3 PMDS 1.5±0.2 2.0±0.2  Structure ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture Date  Taping specifications (Unit : mm) 2.0±0.05 4.0±0.1 φ1.55±0.05 1.75±0.1 0.3 5.5±0.05 φ1.55 2.9±0.1 4.0±0.1 2.8MAX Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) VRM Reverse voltage (DC) VR Average rectified forward current Io Forward current surge peak （60Hz・1cyc） IFSM Junction temperature Tj Storage temperature Tstg (*1) Mounted on epoxy board. 180Half sine wave Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Thermal impedance Limits 40 40 2 70 125 40 to 125 Unit V V A A C C Symbol VF1 VF2 IR θj-a θj-a Min. - Typ. - Max. 0.50 0.45 1 90 120 Unit V V mA C/W Conditions IF=2.0A IF=1.0A VR=40V Mounteing on alumina board Mounted on epxy board www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 5.3±0.1 　 0.05 9.5±0.1 2011.04 - Rev.G 12±0.2 4.2 RB060L-40 　 Data Sheet 10 FORWARD CURRENT:IF(A) Ta=75℃ 1000000 REVERSE CURRENT:IR(uA) Ta=150℃ 1000 f=1MHz 1 Ta=125℃ Ta=150℃ 10000 1000 100 10 1 0.1 0.01 0 5 Ta=125℃ Ta=75℃ Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100000 Ta=25℃ 100 0.1 Ta=-25℃ 10 Ta=-25℃ 0.01 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 15 20 25 30 35 40 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 480 100 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) 470 80 70 60 50 40 30 20 10 0 460 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=2A n=30pcs 90 Ta=25℃ VR=40V n=30pcs 450 AVE:460.4mV AVE:9.069uA 440 430 600 590 580 570 560 550 540 530 520 510 500 Ta=25℃ f=1MHz VR=0V n=10pcs AVE:579.1pF VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 200 REVERSE RECOVERY TIME:trr(ns) Ifsm 1cyc 8.3ms 20 200 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 150 15 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms 1cyc 150 100 AVE:157.0A 10 100 50 5 50 AVE:9.3ns 0 0 0 1 10 100 IFSM DISRESION MAP trr DISPERSION MAP NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 300 1000 2 PEAK SURGE FORWARD CURRENT:IFSM(A) Mounted on epoxy board 100 D=1/2 Rth(j-a) 250 200 150 100 50 0 1 10 Ifsm DC FORWARD POWER DISSIPATION:Pf(W) t Sin(θ＝180) 1 10 IM=10mA 1 1ms 0.1 0.001 time Rth(j-c) IF=1A 300us 0 0.01 0.1 1 10 100 1000 100 0 1 2 3 4 5 TIME:t(ms) IFSM-t CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.G RB060L-40 　 Data Sheet 10 5 5 AVERAGE RECTIFIEＤ FORWARD CURRENT:Io(A) 8 4 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V DC Io t T VR D=t/T VR=20V Tj=125℃ 4 0A 0V DC Io t T VR D=t/T VR=20V Tj=125℃ REVERSE POWER DISSIPATION:PR (W) 6 3 3 D=1/2 2 4 D=1/2 Sin(θ＝180) 2 D=1/2 DC 2 1 1 Sin(θ＝180) Sin(θ＝180) 0 0 25 50 75 100 125 0 0 10 20 30 40 0 0 25 50 75 100 125 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) No break at 30kV 25 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ AVE:17.6kV ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.G Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A