RB060M-30

Data Sheet Schottky barrier diode RB060M-30 Applications General rectification Dimensions (Unit : mm) 1.6±0.1 0.1±0.1 　　　 0.05 Land size figure (Unit : mm) 1.2 Features 1) Small power mold type.(PMDU) 2) Low IR 3) High reliability 0.85 2.6±0.1 3.5±0.2 PMDU Construction Silicon epitaxial planar 0.9±0.1 0.8±0.1 Structure ROHM : PMDU JEDEC :SOD-123 Manufacture Date Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 3.5±0.05 1.75±0.1 0.25±0.05 8.0±0.2 1.81±0.1 4.0±0.1 φ1.0±0.1 3.71±0.1 1.5MAX Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Limits VRM 30 VR 30 2 Io Forward current surge peak (60Hz/1cyc) IFSM 55 Junction temperature 150 Tj Storage temperature 55 to 150 Tstg (*1)Tc=65°C MAX. Mounted on epoxy board. 180°Half sine wave Unit V V A A °C °C Electrical characteristics (Ta=25°C) Parameter Symbol Forward voltage Reverse current ESD break down voltage VF1 VF2 IR ESD Min. 0.32 0.36 7 Typ. 0.4 0.44 10 - Max. 0.45 0.49 50 - Unit V V μA kV IF=1.0A IF=2.0A VR=30V Conditions C=200pF , R=0Ω forward and reverse : 1 time www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.C 3.05 ① RB060M-30 　 Data Sheet 10 Ta=75℃ FORWARD CURRENT:IF(A) 1000000 Ta=150℃ Ta=125℃ 1000 f=1MHz REVERSE CURRENT:IR(uA) 1 Ta=125℃ Ta=150℃ Ta=25℃ 10000 1000 100 10 1 0.1 0.01 Ta=-25℃ Ta=75℃ Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100000 0.1 Ta=-25℃ 0.01 100 0.001 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 0 5 10 15 20 25 30 0 5 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 400 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 470 100 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) 460 450 440 430 420 VF DISPERSION MAP AVE:449.1mV 80 70 60 50 40 30 20 10 0 AVE:7.26uA CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=2A n=30pcs 90 Ta=25℃ VR=30V n=30pcs 390 380 370 360 350 340 330 320 310 300 AVE:374.4pF Ta=25℃ f=1MHz VR=0V n=10pcs IR DISPERSION MAP Ct DISPERSION MAP 300 30 100 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 0 Ifsm 1cyc 8.3ms 25 20 15 10 5 0 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 90 80 70 60 50 40 30 20 10 0 1 Ifsm 8.3m 8.3m 1cyc AVE:68.2A AVE:9.8ns IFSM DISPERSION MAP trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 200 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1000 Mounted on epoxy board IM=10mA 1ms IF=0.5A 3 Rth(j-a) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 150 t 100 time D=1/2 FORWARD POWER DISSIPATION:Pf(W) 300us 2 Sin(θ＝180) DC Rth(j-c) 10 100 50 1 1 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0.1 10 1000 0 0 1 2 3 4 5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.C RB060M-30 5 4 3 2 1 0 0 10 20 30 0 25 50 DC 　 5 0A 0V Data Sheet Io t T VR D=t/T VR=15V Tj=150℃ 5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 4 REVERSE POWER DISSIPATION:PR (W) t T 3 DC 2 Sin(θ＝180) 1 0 D=1/2 VR D=t/T VR=15V Tj=150℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V Io 4 DC 3 D=1/2 2 1 0 0 Sin(θ＝180) D=1/2 Sin(θ＝180) 75 100 125 150 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE:Ta(℃) Derating Curve (Io-Ta) 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curve (Io-Tc) 150 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 5 0 C=200pF R=0Ω AVE:13.2kV No break at 30kV C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A