RB061US-30

Data Sheet Schottky Barrier Diode RB061US-30 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) Features 1)Small power mold type. (TSMD8) 2)Low VF 3)High reliability ● TSMD8 Structure Silicon epitaxial planer ROHM : TSMD8 Manufacture Date ● 1pin mark Structure ( (8）7) (6) (5) （1） 2（3） 4） （）（ Taping dimensions (Unit : mm) Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Tj Storage temperature Tstg (*1)Mounted on epoxy board. 180° Half sine wave Electrical characteristics (Ta=25°C) Parameter Symbol VF1 Forward voltage VF2 Reverse current Capacitance between terminal Reverse recovery time IR Ct trr Limits 30 30 2 8 125 - 40 to +125 Unit V V A A °C °C Min. - Typ. 0.30 0.35 280 80 - Max. 0.35 0.40 900 20 Unit V V μA pF ns IF=1.0A IF=2.0A VR=15V Conditions VR=20V, f=1MHz IF=0.5A, IR=1A, Irr=0.25*IR www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.09 - Rev.A RB061US-30 　 Data Sheet 10 Ta=75°C Ta=125°C FORWARD CURRENT:IF(A) 1 REVERSE CURRENT:IR(mA) 1000 Ta=125°C 100 10 Ta=75°C 0.1 Ta=25°C 0.01 Ta=−25°C 1 Ta=25°C 0.1 Ta=−25°C 0.01 0.001 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0.001 0 5 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1000 f=1MHz FORWARD VOLTAGE:VF(mV) 400 Ta=25°C VF=2A n=30pcs 390 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 380 100 370 AVE:357.7mV 360 10 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 350 VF DISPERSION MAP 300 Ta=25°C VR=15V n=30pcs 250 600 590 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 580 570 560 550 540 530 520 510 AVE:514.4pF Ta=25°C f=1MHz VR=0V n=10pcs REVERSE CURRENT:IR(μA) 200 AVE:147.5μA 150 100 IR DISPERSION MAP 500 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.09 - Rev.A RB061US-30 　 Data Sheet 200 REVERSE RECOVERY TIME:trr(ns) 175 PEAK SURGE FORWARD CURRENT:IFSM(A) 150 125 100 AVE:58.5A 75 50 25 0 IFSM DISPERSION MAP 8.3ms 1cyc 30 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 AVE:8.2ns 10 5 0 trr DISPERSION MAP 100 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms 1cyc PEAK SURGE FORWARD CURRENT:IFSM(A) 80 100 IFSM 80 t 60 60 40 40 20 20 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1000 Mounted on epoxy board TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 Sin(θ＝180) DC D=1/2 100 Rth(j-c) 10 1 0.001 0 0.01 1 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 100 1000 0 0.5 1 1.5 2 2.5 3 3.5 4 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.09 - Rev.A RB061US-30 　 Data Sheet 0.015 4 3.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 3 2.5 2 1.5 Sin(θ＝180) 1 0.5 0 0 10 20 30 0 25 50 75 100 125 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) D=1/2 DC 0A 0V Io t D=t/T VR=15V T Tj=125°C VR REVERSE POWER DISSIPATION:PR (W) 0.01 DC 0.005 D=1/2 Sin(θ＝180) 0 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.09 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A