RB068VWM-30
Data sheet
Schottky Barrier Diode
● Outline
VR
30
V
Io
2
A
IFSM
30
A
● Features
● Inner Circuit
High reliability
Small power mold type
Ultra low IR
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
180
Taping Width(mm)
8
Quantity(pcs)
3000
Taping Code
TR
Marking
GC
General rectification
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
Reverse voltage
V RM
VR
Duty≦0.5
Reverse direct voltage
30
30
V
V
Average rectified forward current
Io
Glass epoxy mounted、
60Hz half sin waveform、resistive load、
Tc=134℃ Max.
2
A
Peak forward surge current
IFSM
60Hz half sin waveform、Non-repetitive、
one cycle、Ta=25℃
30
A
Junction temperature(1)
Storage temperature
Tj
Tstg
-
175
-55 ~ 175
℃
℃
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
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- 3000+1.395513000+0.18029
- 6000+1.274486000+0.16466
- 9000+1.212809000+0.15669
- 15000+1.1434915000+0.14773
- 21000+1.1024421000+0.14243
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- 1000+1.635671000+0.21132
- 国内价格
- 1+1.32840
- 10+1.29600
- 30+1.26360
- 国内价格 香港价格
- 1+1.121761+0.14493
- 300+0.85586300+0.11057
- 500+0.78939500+0.10199
- 1000+0.739531000+0.09555
- 4000+0.697994000+0.09018
- 5000+0.697995000+0.09018
- 10000+0.6896810000+0.08910