RB068VWM100
Data sheet
Schottky Barrier Diode
● Outline
VR
100
V
Io
2
A
IFSM
25
A
● Features
● Inner Circuit
High reliability
Small power mold type
Ultra low IR
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
180
Taping Width(mm)
8
Quantity(pcs)
3000
Taping Code
TR
Marking
KC
General rectification
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
Reverse voltage
V RM
VR
Duty≦0.5
Reverse direct voltage
100
100
V
V
Average rectified forward current
Io
Glass epoxy mounted、
60Hz half sin waveform、resistive load、
Tc=127℃ Max.
2
A
Peak forward surge current
IFSM
60Hz half sin waveform、Non-repetitive、
one cycle、Ta=25℃
25
A
Junction temperature(1)
Storage temperature
Tj
Tstg
-
175
-55 ~ 175
℃
℃
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
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免费人工找货- 国内价格
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- 50+2.79091
- 100+2.70760
- 250+2.62637
- 1000+2.54827
- 国内价格
- 1+2.66760
- 10+2.12760
- 30+1.89000
- 国内价格
- 1+1.30042
- 25+1.12101
- 100+0.96646
- 1000+0.83303
- 3000+0.71819
- 6000+0.66066
- 12000+0.60786
- 国内价格 香港价格
- 1+3.884571+0.46942
- 10+2.9114010+0.35182
- 50+1.8409250+0.22246
- 100+1.36244100+0.16464
- 500+0.87586500+0.10584
- 1000+0.778541000+0.09408
- 2000+0.729882000+0.08820
- 4000+0.721774000+0.08722