RB070M-30

RB070M-30 Diodes Schottky barrier diode RB070M-30 Applications General rectification (Common cathode dual chip) Dimensions (Unit : mm) 1.6±0.1 0.1±0.1 　　　 0.05 Land size figure 1.2 0.85 Features 1) Small power mold type. (PMDU) 2) Low IR 3) High reliability 0.9±0.1 2.6±0.1 3.5±0.2 PMDU Structure Construction Silicon epitaxial planar R OHM : PMDU JEDEC :SOD-123 Manufacture Date 0.8±0.1 Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.25±0.05 3.5±0.05 8.0±0.2 1.81±0.1 4.0±0.1 φ1.0±0.1 3.71±0.1 1.5MAX Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) ∗ Average rectified forward current Forward current surge peak (60Hz 1cyc.) Junction temperature Storage temperature Symbol VRM VR IO IFSM Tj Tstg Limits 30 30 1.5 30 150 −40 to 150 Unit V V A A °C °C ∗ Glass epoxy substrate at the time of assembler, half sine wave at 180°. Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF1 VF2 IR Min. − − − Typ. 0.37 0.44 9 Max. 0.43 0.49 50 Unit V V µA Conditions IF=0.5A IF=1.5A VR=30V ∗Please pay attention to static electricity when handling. Rev.B 3.05 ① 1/3 RB070M-30 Diodes Electrical characteristic curves 10 Ta=75℃ FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) Ta=125℃ 1 Ta=150℃ Ta=25℃ 0.1 Ta=-25℃ 10000 1000 100 Ta=25℃ 10 1 0.1 0.01 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 600 0 5 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS Ta=-25℃ 100000 Ta=150℃ Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 f=1MHz Ta=75℃ 100 10 0.01 0.001 1 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 470 FORWARD VOLTAGE:VF(mV) 460 450 440 430 420 VF DISPERSION MAP AVE:441.5mV REVERSE CURRENT:IR(uA) Ta=25℃ IF=1.5A n=30pcs 200 180 160 140 120 100 80 60 40 20 0 IR DISPERSION MAP AVE:8.828uA Ta=25℃ VR=30V n=30pcs 400 390 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 380 370 360 350 340 330 320 310 300 Ct DISPERSION MAP AVE:332.6pF Ta=25℃ f=1MHz VR=0V n=10pcs 150 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 1cyc 8.3ms 20 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 100 PEAK SURGE FORWARD CURRENT:IFSM(A) 15 100 AVE:96.0A 50 10 AVE:9.30ns 5 50 Ifsm 8.3ms 8.3ms 1cyc 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 IFSM DISRESION MAP 0 trr DISPERSION MAP Mounted on epoxy board 150 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifs t 100 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) IM=10mA IF=0.5A 2 Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) 100 1ms time 1.5 300us D=1/2 DC 10 Rth(j-c) 1 Sin(θ＝180) 50 1 0.5 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0.01 0.1 1 10 100 1000 0 0 TIME:t(s) Rth-t CHARACTERISTICS 1 2 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 3 Rev.B 2/3 RB070M-30 Diodes 0.5 0.4 REVERSE POWER DISSIPATION:PR (W) 0.3 0.2 DC 0.1 0 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 Sin(θ＝180) D=1/2 5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 4 3 2 1 Sin(θ＝180) 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) D=1/2 0A 0V DC Io t T VR D=t/T VR=15V Tj=150℃ 5 4 3 2 1 Sin(θ＝180) 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) DC 0A 0V Io t T VR D=t/T VR=15V Tj=150℃ D=1/2 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ No break at 30kV AVE:8.70kV ESD DISPERSION MAP Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1