RB070M-30_11

Data Sheet Shottky barrier diode RB070M-30  Applications General rectification (Common cathode dual chip)  Dimensions (Unit : mm) 1.6±0.1 0.1±0.1 　　　 0.05  Land size figure (Unit : mm) 1.2 0.85  Features 1) Small power mold type. (PMDU) 2) Low IR 3) High reliability  Construction Silicon epitaxial planar 2.6±0.1 3.5±0.2 PMDU 0.9±0.1  Structure 0.8±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date  Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.25±0.05 3.5±0.05 8.0±0.2 1.81±0.1 4.0±0.1 φ1.0±0.1 3.71±0.1 Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg (*1)Mounted on epoxy board. 180°Half sine wave Limits 30 30 1.5 30 150 40 to 150 Unit V V A A °C °C Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF 1 VF 2 IR Min. - Typ. 0.37 0.44 9.0 Max. 0.43 0.49 50 Unit V V μA IF=0.5A IF=1.5A VR=30V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.B 3.05 ① 1.5MAX RB070M-30 Data Sheet 10 Ta=75℃ 100000 Ta=125℃ 10000 Ta=150℃ Ta=125℃ 1000 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 1 Ta=150℃ Ta=25℃ 0.1 Ta=-25℃ 1000 100 Ta=75℃ Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 30 100 10 1 0.1 0.01 Ta=-25℃ 10 0.01 0.001 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 5 10 15 20 25 0 5 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 470 200 400 FORWARD VOLTAGE:VF(mV) 140 120 100 80 60 40 20 0 AVE:8.828uA CAPACITANCE BETWEEN TERMINALS:Ct(pF) 460 450 440 430 420 VF DISPERSION MAP AVE:441.5mV REVERSE CURRENT:IR(uA) Ta=25℃ IF=1.5A n=30pcs 180 160 Ta=25℃ VR=30V n=30pcs 390 380 370 360 350 340 330 320 310 300 AVE:332.6pF Ta=25℃ f=1MHz VR=0V n=10pcs IR DISPERSION MAP Ct DISPERSION MAP 150 20 100 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 100 8.3ms 15 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 1cyc Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs AVE:96.0A 50 10 AVE:9.30ns 5 50 Ifsm 8.3ms 8.3ms 1cyc 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 IFSM DISRESION MAP 0 trr DISPERSION MAP Mounted on epoxy board 150 1000 IM=10mA IF=0.5A 2 Rth(j-a) Ifs t 100 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD POWER DISSIPATION:Pf(W) 100 1ms time 1.5 300us D=1/2 DC 10 Rth(j-c) 1 Sin(θ＝180) 50 1 0.5 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0.01 0.1 1 10 100 1000 0 0 TIME:t(s) Rth-t CHARACTERISTICS 1 2 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 3 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.B RB070M-30 Data Sheet 0.5 5 5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) t T 0.3 0.2 DC 0.1 0 0 Sin(θ＝180) D=1/2 3 2 1 D=1/2 DC VR D=t/T VR=15V Tj=150℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.4 4 0A 0V Io 4 3 2 1 Sin(θ＝180) 0 0 25 50 DC 0A 0V Io t T VR D=t/T VR=15V Tj=150℃ D=1/2 Sin(θ＝180) 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 5 0 C=200pF R=0Ω No break at 30kV AVE:8.70kV C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A