RB075B40S

Schottky barrier diode RB075B40S Applications General rectification Dimensions(Unit : mm) Land size figure (Unit : mm) 6.0 3)High reliability CPD 2.3 2.3 Construction Silicon epitaxial planar Structure (2) (1) (3) Taping specifications (Unit : mm) Symbol Reverse voltage (repetitive peak) VRM Reverse voltage (DC) VR Average rectified forward current(*1) Io Forward current surge peak (60Hz / 1cyc) IFSM Junction temperature Tj Storage temperature Tstg (*1)Business frequencies,Rating of R-load,Tc=125°C MAX Absolute maximum ratings (Ta=25°C) Parameter Limits 40 40 5 45 150 -40 to +150 Unit V V A A °C °C Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF IR Min. - Typ. - Max. 0.75 5.0 Unit V µA Conditions IF=5.0A VR=40V www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 1/3 2009.11 - Rev.A 3.0 Features 1)Power mold type.(CPD) 2)Low IR 2.0 1.6 1.6 6.0 RB075B40S Electrical characteristic curves 　 Data Sheet 10 Ta=150° C FORWARD CURRENT : IF(A) Ta=125° C 1 Ta=75° C Ta=25° C 1000000 100000 REVERSE CURRENT:IR(nA) 10000 1000 Ta=150° C Ta=125° C 10000 f=1MHz Ta=75° C CAPACITANCE BETWEEN TERMINALS : Ct(pF) 30 1000 Ta=25° C 100 10 1 0.1 Ta=-25° C 0.1 Ta=25° C 100 0.01 0 100 200 300 400 500 600 700 0 5 10 15 20 25 10 0 10 20 30 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 700 FORWARD VOLTAGE : VF(mV) REVERSE CURRENT : IR(µA) Ta=25° C IF=5A n=30pcs 1000 CAPACITANCE BETWEEN TERMINALS : Ct(pF) 900 800 700 600 500 400 300 200 100 AVE:89.7nA Ta=25° C VR=40V n=30pcs 650 640 630 620 610 600 590 580 570 560 550 IR DISPERSION MAP Ct DISPERSION MAP AVE:586.9pF Ta=25° C f=1MHz VR=0V n=10pcs 690 680 670 AVE:675.8mV 660 650 VF DISPERSION MAP 0 300 RESERVE RECOVERY TIME : trr(ns) PEAK SURGE FORWARD CURRENT : IFSM(A) 250 200 150 100 50 0 IFSM DISPERSION MAP Ifsm 8.3ms 1cyc 30 25 20 15 10 5 0 trr DISPERSION MAP AVE:15.2ns Ta=25° C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 1000 PEAK SURGE FORWARD CURRENT : IFSM(A) Ifsm 8.3ms 100 8.3ms 1cyc AVE:130.0A 10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1000 TRANSIENT ° THAERMAL IMPEDANCE : Rth ( C/W) 100 Rth(j-a) Rth(j-c) FORWARD POWER DISSIPATION : Pf(W) 15 D=1/2 PEAK SURGE FORWARD CURRENT : IFSM(A) DC Ifsm t 10 10 Sin(θ=180) 100 Mounted on epoxy board 1 IM=100mA IF=1A 5 1ms 0.1 0.001 tim 300µs 0.01 0.1 1 10 100 1000 0 0 10 15 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 5 20 10 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100 TIME : t(s) Rth-t CHARACTERISTICS www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.11 - Rev.A RB075B40S 　 Data Sheet 0.03 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 20 0A 15 D=1/2 DC 10 T 0V t Io AVERAGE RECTIFIED FORWARD CURRENT : Io(A) VR D=t/T VR=20V Tj=150° C 20 0A 15 0V t DC 10 D=1/2 5 Sin(θ=180) T Io VR D=t/T VR=20V Tj=150° C REVERSE POWER DISSIPATION : PR (W) Sin(θ=180) 0.02 D=1/2 DC 0.01 5 Sin(θ=180) 0 0 10 20 30 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta(° C) DERATING CURVE"(Io-Ta) 0 0 25 50 75 100 125 150 CASE TEMPARATURE : Tc( ° C) DERATING CURVE"(Io-Tc) www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.11 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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