RB075B40S_11

Data Sheet Schottky barrier diode RB075B40S Applications General rectification Dimensions(Unit : mm) Land size figure (Unit : mm) 6.0 3)High reliability CPD 2.3 2.3 Construction Silicon epitaxial planar Structure (2) (1) Taping specifications (Unit : mm) (3) Symbol Reverse voltage (repetitive peak) VRM Reverse voltage (DC) VR Average rectified forward current(*1) Io Forward current surge peak (60Hz / 1cyc) IFSM Junction temperature Tj Storage temperature Tstg (*1)Business frequencies,Rating of R-load,Tc=125C MAX Absolute maximum ratings (Ta=25C) Parameter Limits 40 40 5 45 150 40 to 150 Unit V V A A C C Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Symbol VF IR Min. - Typ. - Max. 0.75 5.0 Unit V A Conditions IF=5.0A VR=40V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.A 3.0 Features 1)Power mold type.(CPD) 2)Low IR 2.0 1.6 1.6 6.0 RB075B40S Electrical characteristic curves 　 Data Sheet 10 1000000 Ta=150 C Ta=125 C 10000 Ta=125 C 1 10000 1000 Ta=75 C CAPACITANCE BETWEEN TERMINALS : Ct(pF) FORWARD CURRENT : I F(A) REVERSE CURRENT:IR(nA) Ta=150 C 100000 f=1MHz 1000 Ta=75C Ta=25C Ta=25 C Ta=25 C 100 10 1 0.1 Ta=-25 C 0.1 100 0.01 0 100 200 300 400 500 600 700 0 5 10 15 20 25 30 10 0 10 20 30 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 700 1000 650 FORWARD VOLTAGE : V F(mV) CAPACITANCE BETWEEN TERMINALS : Ct(pF) REVERSE CURRENT : IR(A) 690 Ta=25 C IF=5A n=30pcs 900 800 700 600 500 400 300 200 100 AVE:89.7nA Ta=25 C VR=40V n=30pcs 640 630 620 610 600 590 580 570 560 550 AVE:586.9pF Ta=25 C f=1MHz VR=0V n=10pcs 680 670 AVE:675.8mV 660 650 VF DISPERSION MAP 0 IR DISPERSION MAP Ct DISPERSION MAP 300 30 1000 REVERSE RECOVERY TIME : trr(ns) PEAK SURGE FORWARD CURRENT : I FSM(A) 250 200 150 100 50 0 Ifsm 8.3ms 1cyc 25 20 15 10 5 0 AVE:15.2ns PEAK SURGE FORWARD CURRENT : I FSM(A) Ta=25 C IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 100 8.3ms 1cyc AVE:130.0A 10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 trr DISPERSION MAP IFSM DISPERSION MAP 1000 100 15 Rth(j-a) D=1/2 TRANSIENT THAERMAL IMPEDANCE : Rth ( C/W) PEAK SURGE FORWARD CURRENT : I FSM(A) DC Ifsm t 10 FORWARD POWER DISSIPATION : Pf(W) Rth(j-c) 10 Sin(=180) 100 Mounted on epoxy board 1 IM=100mA IF=1A 5 1ms 0.1 0.001 tim 300s 0.01 0.1 1 10 100 1000 0 0 5 10 15 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 20 10 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100 TIME : t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.A RB075B40S 　 Data Sheet 0.03 20 0A 15 D=1/2 DC 10 T 0V t Io 20 0A Io t DC 10 D=1/2 5 Sin(=180) T VR D=t/T VR=20V Tj=150 C AVERAGE RECTIFIED FORWARD CURRENT : Io(A) AVERAGE RECTIFIED FORWARD CURRENT : Io(A) REVERSE POWER DISSIPATION : PR (W) Sin(=180) 0.02 D=1/2 DC VR D=t/T VR=20V Tj=150 C 15 0V 0.01 5 Sin(=180) 0 0 10 20 30 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta( C) Derating Curve"(Io-Ta) 0 0 25 50 75 100 125 150 CASE TEMPARATURE : Tc( C) Derating Curve"(Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A