RB078B30S

Data Sheet Schottky Barrier Diode RB078B30S lApplications Swiching power supply lDimensions (Unit : mm) 6.5±0.2 2.3±0.2 0.1 lLand size figure (Unit : mm) 6.0 C0.5 5.1±0.2 0.1 lFeatures 1)Power mold type.(CPD) 2)High reliability 3)Low IR 1.5±0.3 5.5±0. 3 ① 0.8 min 0.75 0.65±0.1 2.5 9.5±0.5 0.9 （1） （2） （3） CPD 2.3 2.3 0.5±0.1 1.0±0.2 lConstruction Silicon epitaxial planer 2.3±0.2 2.3±0.2 lStructure ROHM : CPD JEITA : SC-63 ① Manufacture Date lTaping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 8.0±0.1 φ 1.55±0.1 　　　　　 0 0.4±0.1 7.5±0.05 2.5±0.1 10.1±0.1 6 .8±0.1 8.0±0.1 φ 3.0±0.1 0～0.5 13.5±0.2 10.1±0.1 TL 16.0±0.2 2.7±0.2 lAbsolute maximum ratings (Tc=25C) Parameter Limits Symbol VRM Reverse voltage (repetitive peak) 30 VR Reverse voltage (DC) 30 Average rectified forward current (*1) 5 Io IFSM Forward current surge peak (60Hz・1cyc) 40 Junction temperature 150 Tj Storage temperature -55 to +150 Tstg (*1) Business frequencies, Rating of R-load, Tc=95°C Max. lElectrical characteristics (Tj=25C) Parameter Symbol VF Forward voltage Reverse current IR Unit V V A A C C Min. - Typ. - Max. 0.72 5 Unit V μA IF=5.0A VR=30V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.10 - Rev.A 3.0 2.0 1.6 1.6 6.0 0.5±0.1 RB078B30S 　 Data Sheet 10 1000 Tj=150°C 100 Tj=150°C FORWARD CURRENT:IF(A) 1 Tj=125°C REVERSE CURRENT:IR(mA) Tj=125°C 10 Tj=25°C 0.1 1 0.1 Tj=25°C 0.01 0 100 200 300 400 500 600 700 800 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0.01 0 10 20 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 10000 f=1MHz Tj=25°C FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 700 Tj=25°C IF=5.0A n=20pcs 600 AVE:619.5mV 1000 100 500 10 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 400 VF DISPERSION MAP 10 Tj=25°C VR=30V n=20pcs 1 AVE:0.14mA CAPACITANCE BETWEEN TERMINALS:Ct(pF) 900 Ta=25°C f=1MHz VR=0V n=10pcs REVERSE CURRENT:IR(mA) 800 AVE:825.5pF 0.1 0.01 IR DISPERSION MAP 700 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.10 - Rev.A RB078B30S 　 Data Sheet 120 30 Tj=25°C IF=0.5A IR=1.0A Irr=0.25×IR n=10pcs REVERSE RECOVERY TIME:trr(ns) ITS ABILITY OF PEAK SURGE FORWARD CURRENT:IFSM(A) 100 25 80 AVE:96.5A 20 60 15 AVE:15.3ns 10 40 IFSM 20 8.3ms 0 IFSM DISPERSION MAP 1cyc 5 0 trr DISPERSION MAP 1000 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 1000 IFSM 8.3ms 100 8.3ms 1cyc. PEAK SURGE FORWARD CURRENT:IFSM(A) 100 time 10 10 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 100 6 TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) Rth(j-a) 5 D=1/2 4 Sin(θ＝180) 3 D.C. 10 Rth(j-c) 1 FORWARD POWER DISSIPATION:Pf(W) 1000 2 On glass-epoxy substrate soldering land 50mm□ 0.1 0.001 1 0 0.01 0.1 1 10 100 0 2 TIME:t(s) Rth-t CHARACTERISTICS 4 6 8 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 10 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.10 - Rev.A RB078B30S 　 Data Sheet 0.015 10 0A D.C. 8 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0V t T 6 D=1/2 Io VR D=t/T VR=20V Tj=150°C REVERSE POWER DISSIPATION:PR (W) 0.01 D.C. 4 Sin(θ＝180) 0.005 D=1/2 2 Sin(θ＝180) 0 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0A 10 9 D.C. AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 8 ELECTROSTATIC DISCHARGE TEST ESD(KV) 7 6 5 4 3 2 1 0 0 25 50 75 100 125 150 CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) 0 C=200pF R=0Ω C=100pF R=1.5kΩ Sin(θ＝180) D=1/2 T 0V t Io VR D=t/T VR=20V Tj=150°C 30 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) 25 AVE：26.5kV 20 15 AVE：7.1kV 10 5 ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A