RB080L-30

Schottky Barrier Diode RB080L-30 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 2.0 2.0 2.6±0.2 Features 1)Small power mold type. (PMDS) 2)High reliability 3)Low VF 4.5±0.2 1.2±0.3 2 ① 1 ② 0.1±0.02 　　　 0.1 5.0±0.3 1.5±0.2 2.0±0.2 PMDS Structure Silicon epitaxial planer ROHM : PMDS JEDEC : SOD-106 ① ② year week factory Structure Taping dimensions (Unit : mm) 4.0 ±0.1 2.0 ±0.05 φ1.55 ±0.05 0.3 5.5 ±0.05 1.75 ±0.1 5.3 +0.1 -0.0 φ1.55 2.9 ±0.1 4.0 ±0.1 2.8MAX Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit VRM Reverse voltage (repetitive) 30 V VR Reverse voltage (DC) 30 V Average rectified forward current (*1) 5 Io A IFSM Forward current surge peak (60Hz・1cyc) 70 A Junction temperature 150 Tj C Storage temperature C 40 to 150 Tstg (*1)Alumina substrate at the time of assemble 180° Half Sine Wave, Tc=100°C MAX. Electrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage Reverse current IR Min. - Typ. - Max. 0.51 150 Unit V μA IF=5.0A VR=30V Conditions www.rohm.com ©2011 ROHM Co., Ltd. All rights reserved. 9.5 ±0.1 1/4 2011.12 - Rev.B 12 ±0.2 4.2 RB080L-30 　 Data Sheet 10 Tj=150°C 1 Tj=125°C REVERSE CURRENT:IR(A) 100000 Tj=150°C 10000 Tj=125°C 1000 Tj=75°C FORWARD CURRENT:IF(A) 0.1 100 Tj=25°C 10 0.01 Tj=25°C Tj=75°C 0.001 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 10 20 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 10000 f=MHz FORWARD VOLTAGE:VF(mV) 480 475 470 465 460 455 450 445 440 435 AVE:443.4mV IF=5.0A CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 100 10 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 430 VF DISPERSION MAP 30 VR=30V 1250 1230 f=1MHz VR=0V 25 REVERSE CURRENT:IR(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1210 1190 1170 1150 1130 1110 5 1090 0 IR DISPERSION MAP 1070 Ct DISPERSION MAP AVE:1156pF 20 AVE:22.2A 15 10 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.12 - Rev.B RB080L-30 　 Data Sheet 330 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 280 8.3ms 8.3ms 1cyc 230 AVE：225A 180 REVERSE RECOVERY TIME:trr(ns) 30 IF=0.5A IR=1A Irr=0.25*IR 25 20 15 AVE:18.9ns 10 130 5 80 IFSM DISPERSION MAP 0 trr DISPERSION MAP 230 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms 220 1cyc. PEAK SURGE FORWARD CURRENT:IFSM(A) 350 300 250 200 150 100 50 IFSM time 210 200 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1000 On glass-epoxy substrate 5 D.C. D=1/2 4 TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) Sin(θ＝180) 100 Rth(j-c) FORWARD POWER DISSIPATION:Pf(W) Rth(j-a) 3 2 10 1 1 0.01 0 0.1 1 10 100 1000 0 2 TIME:t(s) Rth-t CHARACTERISTICS 4 6 8 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 10 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.12 - Rev.B RB080L-30 　 Data Sheet 1 0.9 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.8 REVERSE POWER DISSIPATION:PR (W) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Sin(θ＝180) 0 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS D=1/2 D.C. 10 9 8 7 6 5 4 3 2 1 0 0 25 50 75 100 125 150 CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc) Sin(θ＝180) D=1/2 D.C. 0A 0V Io t T VR D=t/T VR=15V Tj=150°C 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 AVE:13.2kV 5 0 C=200pF R=0Ω C=150pF R=330Ω ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.12 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. 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