RB081L-20

RB081L-20 Diodes Schottky barrier diode RB081L-20 Applications General rectification External dimensions (Unit : mm) Land size figure (Unit : mm) 2.0 2.6±0.2 ① ② 0 .1±0.0 2 　　　 0.1 5.0 ±0.3 3 9 4.5±0.2 Features 1) Small power mold type. (PMDS) 2) Low VF, Low IR. 3) High reliability. 2.0 1.2±0.3 PMDS 1.5±0.2 2.0±0.2 Structure Construction Silicon epitaxial planar ROHM : PMDS JEDEC : S OD- 1 0 6 ① ② Manufac uture Date Taping specifications(Unit : mm) 2.0±0.05 4.0±0.1 φ1 .55±0.05 1.75 ±0 .1 0.3 5.5±0 .05 φ1 .5 5 2.9±0.1 4.0±0.1 2.8MAX Absolute maximum ratings (Ta=25°C) Param eter Sym bol Reverse voltage (repetitive peak) VRM Reverse voltage (DC) VR Average rectified forward current (*1) Io Forward current surge peak （60Hz・1cyc） IFSM Junction tem perature Tj Storage tem perature Tstg (*1) Mounted on epoxy board. 180°Harf sine wave Lim its 25 20 5 70 125 -40 to +125 Electrical characteristics (Ta=25°C) Param eter Forward voltage Reverse current Sym bol VF IR Min. - Typ. - Max. 0.45 700 Unit V µA Conditions IF=0.5A VR=20V 5.3±0 .1 　 0 .0 5 9.5±0.1 Unit V V A A ℃ ℃ 12±0.2 4.2 Rev.B 1/3 RB081L-20 Diodes Electrical characteristic curves (Ta=25°C) 10 Ta=75℃ 1000000 100000 10000 1000 100 10 1 0 200 400 600 0 5 10 15 20 25 30 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS Ta=25℃ Ta=125℃ Ta=75℃ 1000 f=1MHz FORWARD CURRENT:IF(A) Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 Ta=125℃ REVERSE CURRENT:IR(uA) 100 0.1 Ta=-25℃ 0.01 Ta=-25℃ 10 0.001 1 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 400 1000 Ta=25℃ IF=5A n=30pcs 900 Ta=25℃ VR=20V n=30pcs 950 940 Ta=25℃ f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 390 800 700 600 500 400 300 200 100 0 AVE:201.3uA 930 920 910 900 890 880 870 860 850 AVE:898.1pF 380 370 360 AVE:380.3mV 350 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 300 30 Ifsm 1cyc 8.3ms 300 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 25 20 15 10 AVE:11.7ns 5 0 PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 250 200 150 100 50 0 1 Ifsm 8.3ms 8.3ms 1cyc AVE:196.0A 0 IFSM DISRESION MAP trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 300 1000 5 Mounted on epoxy board Rth(j-a) 4 PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 0 1 Ifsm t TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) FORWARD POWER DISSIPATION:Pf(W) 100 Rth(j-c) 10 IM=100mA IF=1A D=1/2 3 Sin(θ＝180) 2 1 0 DC 1 1ms time 300us 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0 .1 0.001 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 0 2 4 6 8 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 10 Rev.B 2/3 RB081L-20 Diodes 2 10 9 10 0A 0V t T DC D=1/2 Sin(θ＝180) Io 9 VR D=t/T VR=10V Tj=125℃ DC 0A 0V t D=1/2 T Io VR D=t/T VR=10V Tj=125℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 1.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 8 7 6 5 4 3 2 1 0 8 7 6 5 4 3 2 1 0 Sin(θ＝180) REVERSE POWER DISSIPATION:PR (W) Sin(θ＝180) 1 DC D=1/2 0.5 - 0 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0 25 50 75 10 0 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 5 0 AVE:24.8kV C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1