RB081L-20_11

Data Sheet Shottky barrier diode RB081L-20  Applications General rectification  Dimensions (Unit : mm)  Land size figure (Unit : mm) 2.0 2.6±0.2 3) High reliability. ① ② 0.1±0.02 　　　 0.1 5.0±0.3 3 9 4.5±0.2 1.2±0.3  Features 1) Small power mold type. (PMDS) 2) Low VF, Low IR. 2.0 PMDS  Construction Silicon epitaxial planar 1.5±0.2 2.0±0.2  Structure ROHM : PMDS JEDEC : SOD-106 ① ② Manufacuture Date  Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.3 5.5±0.05 1.75±0.1 φ1.55 2.9±0.1 4.0±0.1 2.8MAX Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 25 20 5 70 125 40 to 125 Unit V V A A °C °C (*1)Mounted on epoxy board. 180°Half sine wave Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF IR Min. - Typ. - Max. 0.45 700 Unit V μA IF=5.0A VR=20V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 5.3±0.1 　 0.05 9.5±0.1 Conditions 2011.04 - Rev.B 12±0.2 4.2 RB081L-20 Data Sheet 10 Ta=75℃ 1000000 100000 10000 1000 100 10 1 0 100 200 300 400 500 600 0 5 10 15 20 25 30 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS Ta=125℃ Ta=75℃ 1000 f=1MHz REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 1 Ta=125℃ Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 0.1 Ta=-25℃ Ta=25℃ 0.01 Ta=-25℃ 10 0.001 1 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 400 1000 950 Ta=25℃ VR=20V n=30pcs 940 930 920 910 900 890 880 870 860 850 AVE:898.1pF Ta=25℃ f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) 700 600 500 400 300 200 100 0 AVE:201.3uA 380 370 360 AVE:380.3mV 350 VF DISPERSION MAP IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) 390 REVERSE CURRENT:IR(uA) Ta=25℃ IF=5A n=30pcs 900 800 Ct DISPERSION MAP 300 30 Ifsm 1cyc 8.3ms 300 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 25 20 15 10 AVE:11.7ns 5 0 PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 250 200 150 100 50 0 1 Ifsm 8.3ms 8.3ms 1cyc AVE:196.0A 0 IFSM DISRESION MAP trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 300 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1000 Mounted on epoxy board Rth(j-a) 5 4 PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 0 1 Ifsm FORWARD POWER DISSIPATION:Pf(W) t 100 D=1/2 3 Sin(θ＝180) 2 1 0 DC 10 IM=100mA Rth(j-c) IF=1A 1 1ms time 300us 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 TIME:t(s) Rth-t CHARACTERISTICS 0.1 10 1000 0 4 6 8 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 10 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.B RB081L-20 Data Sheet 2 10 9 10 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 1.5 Sin(θ＝180) 1 DC D=1/2 0.5 8 7 6 5 4 3 2 1 0 DC D=1/2 t T AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V Io VR D=t/T VR=10V Tj=125℃ 9 8 7 6 5 4 3 2 1 0 DC 0A 0V Io t T VR D=t/T VR=10V Tj=125℃ D=1/2 Sin(θ＝180) Sin(θ＝180) 0 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-PR C HARACTERISTICS 0 25 50 75 100 125 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 5 0 AVE:24.8kV C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A