RB083L-20TE25

RB083L-20 Diodes Schottky barrier diode RB083L-20 !External dimensions (Units : mm) !Applications High frequency rectification For switching power supply 5 4.5±0.2 CATHODE MARK 7 0.1 +0.02 −0.1 5.0±0.3 !Features 1) Compact power mold type. (PMDS) 2) Ultra low VF / Low IR. 3) IO=5A guaranteed despite the size. 1.2±0.3 1.5±0.2 2.0±0.2 2.6±0.2 !Construction Silicon epitaxial planar ROHM : PMDS EIAJ : − JEDEC : SOD-106 Date of manufacture EX. 1999.12 → 9,C !Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Peak reverse voltage VRM 25 V DC reverse voltage VR 20 V Mean rectifying current ∗ IO 5 A IFSM 70 A Junction temperature Tj 125 °C Storage temperature Tstg Peak forward surge current (60Hz 1 ) −40~+125 °C ∗ When mounted on alumina PCBs (82×30×1.0mm), Tc Max.=90°C !Electrical characteristics (Ta=25°C) Conditions Symbol Min. Typ. Max. Unit Forward voltage VF − − 0.39 V IF=3.0A Reverse current IR − − 500 µA VR=20V Parameter RB083L-20 Diodes 1 Ta=125°C REVERSE CURRENT : IR (A) FORWARD CURRENT : IF (A) 10 1 Ta=75°C 100m 10m Ta=25°C 1m 0 0.1 0.2 0.3 0.4 100m 10m Ta=75°C 1m Ta=25°C 100µ 10µ 0.5 Ta=125°C 10 0 DC 6.0 D=0.8 5.0 4.0 D=0.5 sine wave 3.0 D=0.3 D=0.2 2.0 D=0.1 D=0.05 1.0 0.0 50 75 100 AMBIENT TEMPERATURE : Ta (°C) Fig.4 Derating curve (lo-Ta) (When mounted on alumina PCBs) 125 AVERAGE RECTIFIED FOWARD CURRENT : Io (A) AVERAGE RECTIFIED FOWARD CURRENT : Io (A) 7.0 8.0 7.0 6.0 DC D=0.8 D=0.3 4.0 D=0.2 3.0 D=0.1 2.0 D=0.05 1.0 0.0 0 25 50 75 100 CASE TEMPERATURE : Tc (˚C) Fig.5 Derating curve (lo-Tc) (When mounted on alumina PCBs) 1000 100 10 0 10 20 30 Fig.3 Cpacitance between terminals characteristics D=0.5 sine wave 5.0 10000 REVERSE VOLTAGE : VR (V) Fig.2 Reverse characteristics Fig.1 Forward characteristics 25 40 REVERSE VOLTAGE : VR (V) FORWARD VOLTAGE : VF (V) 0 30 20 CAPACITANCE BETWEEN TERMINALS : CT (pF) !Electrical characteristic curves (Ta=25°C) 125