RB085B-30

Schottky Barrier Diode RB085B-30 Applications General rectification Dimensions(Unit : mm)      Land size figure(Unit : mm) 6.0      1.6      1.6 3)High reliability CPD 2.3 2.3 Construction Silicon epitaxial planar Structure (2) (1) (3) Taping specifications(Unit : mm) Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(*1) Forward current surge peak (60Hz / 1cyc)(*1) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 35 30 10 35 150 -40 to +150 Unit V V A A °C °C (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=105°C Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Thermal impedance 3.0 2.0 Features 1)Power mold type.(CPD) 2)Low VF 6.0 Symbol VF IR θjc Min. - Typ. - Max. 0.48 300 6.0 Unit V µA °C/W Conditions IF=4.0A VR=30V junction to case www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 1/3 2009.11 - Rev.E RB085B-30 Electrical characteristics curves 10 Ta=150° C FORWARD CURRENT : IF(A) REVERSE CURRENT:IR(uA) Ta=125° C 1 Ta=75° C Ta=-25° C Ta=25° C 1000000 100000 10000 1000 100 10 1 0.1 0.01 0 100 200 300 400 500 600 700 0.01 0 5 FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS 　 Data Sheet Ta=150° C Ta=125° C 10000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75° C 1000 Ta=25° C 0.1 Ta=-25・C 100 10 10 15 20 25 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 30 0 10 20 30 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 460 Ta=25° C IF=4A n=30pcs 200 180 REVERSE CURRENT:IR(uA) 160 140 120 100 80 60 40 20 AVE:41.0uA Ta=25° C VR=30V n=30pcs 2000 1950 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1900 1850 1800 1750 1700 1650 1600 1550 1500 AVE:1617.3pF Ta=25° C f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) 450 440 430 420 AVE:429.3mV 410 VF DISPERSION MAP 0 IR DISPERSION MAP Ct DISPERSION MAP RESERVE RECOVERY TIME:trr(ns) 300 PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 0 IFSM DISPERSION MAP Ifsm 8.3ms 1cyc 30 25 20 15 10 5 0 trr DISPERSION MAP Mounted on a epoxy board IM=100mA IF=5A 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs AVE:19.3ns Ifsm 8.3ms 100 8.3ms 1cyc AVE:63.0A 10 1 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 1000 100 TRANSIENT ・ THAERMAL IMPEDANCE:Rth ( C/W) 1ms time 5 Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm t 300us 4 D=1/2 3 Sin(θ=180) 2 DC 10 Rth(j-c) 100 1 1 10 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0.01 0.1 1 10 100 1000 0 0 5 10 15 TIME : t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.11 - Rev.E RB085B-30 　 Data Sheet 10 20 0A AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 15 DC 10 D=1/2 5 Sin(θ=180) 0V t T Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR D=t/T VR=15V Tj=150° C 20 0A 15 0V t DC 10 D=1/2 5 Sin(θ=180) T Io VR D=t/T VR=15V Tj=150° C 8 REVERSE POWER DISSIPATION:PR (W) Sin(θ=180) 6 D=1/2 DC 4 2 0 0 10 20 30 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(° C) Derating Curve"(Io-Ta) 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(° C) Derating Curve"(Io-Tc) 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ No break at 30kV ESD DISPERSION MAP www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 3/3 2009.11 - Rev.E Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. 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