Schottky Barrier Diode
RB085B-30
Applications General rectification Dimensions(Unit : mm)
Land size figure(Unit : mm)
6.0
1.6
1.6
3)High reliability
CPD
2.3 2.3
Construction Silicon epitaxial planar
Structure
(2)
(1) (3)
Taping specifications(Unit : mm)
Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(*1) Forward current surge peak (60Hz / 1cyc)(*1) Junction temperature Storage temperature
Symbol VRM VR Io IFSM Tj Tstg
Limits 35 30 10 35 150 -40 to +150
Unit V V A A °C °C
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=105°C Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Thermal impedance
3.0 2.0
Features 1)Power mold type.(CPD) 2)Low VF
6.0
Symbol VF IR θjc
Min. -
Typ. -
Max. 0.48 300 6.0
Unit V µA °C/W
Conditions IF=4.0A VR=30V junction to case
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1/3
2009.11 - Rev.E
RB085B-30
Electrical characteristics curves
10 Ta=150° C FORWARD CURRENT : IF(A) REVERSE CURRENT:IR(uA) Ta=125° C 1 Ta=75° C Ta=-25° C Ta=25° C 1000000 100000 10000 1000 100 10 1 0.1 0.01 0 100 200 300 400 500 600 700 0.01 0 5 FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS
Data Sheet
Ta=150° C
Ta=125° C
10000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ta=75° C
1000
Ta=25° C
0.1
Ta=-25・C
100
10 10 15 20 25 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 30 0 10 20 30 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS
460 Ta=25° C IF=4A n=30pcs
200 180 REVERSE CURRENT:IR(uA) 160 140 120 100 80 60 40 20 AVE:41.0uA Ta=25° C VR=30V n=30pcs
2000 1950 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1900 1850 1800 1750 1700 1650 1600 1550 1500 AVE:1617.3pF Ta=25° C f=1MHz VR=0V n=10pcs
FORWARD VOLTAGE:VF(mV)
450
440
430
420
AVE:429.3mV
410 VF DISPERSION MAP
0 IR DISPERSION MAP
Ct DISPERSION MAP
RESERVE RECOVERY TIME:trr(ns)
300 PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 0 IFSM DISPERSION MAP Ifsm 8.3ms 1cyc
30 25 20 15 10 5 0 trr DISPERSION MAP Mounted on a epoxy board
IM=100mA IF=5A
1000
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs AVE:19.3ns
Ifsm 8.3ms 100 8.3ms
1cyc
AVE:63.0A
10 1 10 100
NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
1000
100 TRANSIENT ・ THAERMAL IMPEDANCE:Rth ( C/W)
1ms time
5
Rth(j-a) FORWARD POWER DISSIPATION:Pf(W)
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm t
300us
4 D=1/2 3 Sin(θ=180) 2 DC
10 Rth(j-c)
100
1
1
10 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100
0.1 0.001
0.01
0.1
1
10
100
1000
0 0 5 10 15
TIME : t(s) Rth-t CHARACTERISTICS
AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS
www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved.
2/3
2009.11 - Rev.E
RB085B-30
Data Sheet
10
20 0A AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 15 DC 10 D=1/2 5 Sin(θ=180) 0V t T Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR D=t/T VR=15V Tj=150° C
20 0A 15 0V t DC 10 D=1/2 5 Sin(θ=180) T Io VR D=t/T VR=15V Tj=150° C
8 REVERSE POWER DISSIPATION:PR (W)
Sin(θ=180)
6
D=1/2 DC
4
2
0 0 10 20 30 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS
0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(° C) Derating Curve"(Io-Ta)
0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(° C) Derating Curve"(Io-Tc)
30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ No break at 30kV
ESD DISPERSION MAP
www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved.
3/3
2009.11 - Rev.E
Notice
Notes
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