RB085B-90_11

Data Sheet Schottky Barrier Diode RB085B-90 Application General rectification Dimensions(Unit : mm) Land size figure(Unit : mm) 6.0 6.0 3)High reliability CPD 2.3 2.3 Construction Silicon epitaxial planar ROHM : CPD JEITA : SC-63 Manufacture Date Structure (2) (1) (3) Taping dimensions(Unit : mm) Symbol VRM VR Io IFSM Tj Tstg (*1)Business frequencies, Rating of R-load, Tc=85C Max. Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(*1) Forward current surge peak(60Hz / 1cyc)(*1) Junction temperature Storage temperature Absolute maximum ratings (Ta=25C) Parameter Limits 90 90 10 45 150 40 to 150 Unit V V A A C C Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Thermal impedance 3.0 2.0 Features 1)Power mold type.(CPD) 2)Low VF 1.6 1.6 Symbol VF IR jc Min. - Typ. - Max. 0.83 150 6.0 Unit V μA C/W Conditions IF=5.0A VR=90V junction to case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.C RB085B-90 Electrical characteristic curves 10 Data Sheet 100000 Ta=150 C 10000 Ta=150 C Ta=125 C Ta=75 C 1000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 90 1 Ta=125 C Ta=75 C Ta=25 C Ta=-25 C REVERSE CURRENT:IR(uA) FORWARD CURRENT:I F(A) 1000 100 100 0.1 Ta=25 C 10 1 0.1 0.01 Ta=-25 C 10 0.01 0.001 0 100 200 300 400 500 600 700 800 900 1 0 10 20 30 40 50 60 70 80 0 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 790 Ta=25 C IF=5A n=30pcs 200 180 550 FORWARD VOLTAGE:V F(mV) REVERSE CURRENT:IR(uA) 780 160 140 120 100 80 60 40 20 0 AVE:14.3uA CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25 C VR=90V n=30pcs 540 530 520 510 500 490 480 470 460 450 Ta=25 C f=1MHz VR=0V n=10pcs 770 760 750 AVE:766.6mV 740 AVE:498.5pF VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 300 30 1000 Ta=25 C IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms 1cyc 100 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:I FSM(A) Ifsm 1cyc 8.3ms 200 150 100 50 0 AVE:136.0A 20 15 10 5 AVE:7.40ns 0 PEAK SURGE FORWARD CURRENT:I FSM(A) 250 25 10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISPERSION MAP trr DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.C RB085B-90 Data Sheet Mounted on epoxy board 1000 100 IM=100mA IF=5A Rth(j-a) 15 TRANSIENT THAERMAL IMPEDANCE : Rth ( C/W) PEAK SURGE FORWARD CURRENT : I FSM(A) Ifsm 1ms tim D=1/2 FORWARD POWER DISSIPATION : Pf(W) t 300us 10 Rth(j-c) 10 DC Sin(＝180) 100 1 5 10 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0 0.01 0.1 1 10 100 1000 0 5 10 15 20 TIME : t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 30 0A Io 0A Io t T VR D=t/T VR=45V Tj=150 C 10 30 AVERAGE RECTIFIDE FORWARD CURRENT :I o(A) 8 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 0V 20 REVERSE POWER DISSIPATION : PR (W) t T VR D=t/T VR=45V Tj=150 C 0V 20 DC D=1/2 10 Sin(180) 6 Sin(180) 4 D=1/2 DC 2 DC D=1/2 10 Sin(180) 0 0 10 20 30 40 50 60 70 80 90 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta(C) Derating Curve"(Io-Ta) 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc( C) Derating Curve(Io-Tc) 30 25 No break at 30kV ELECTROSTATIC DDISCHARGE TEST ESD(KV) 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k AVE:5.30kV ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A