RB085BGE-30
Schottky Barrier Diode
Data sheet
● Outline
VR
30
V
Io
10
A
IFSM
50
A
● Features
● Inner Circuit
High reliability
Power mold type
Cathode common dual type
Low V F
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
16
Quantity(pcs)
2500
Taping Code
TL
Marking
B085BM30
Switching power supply
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V RM
Duty≦0.5
35
V
Reverse voltage
VR
Reverse direct voltage
30
V
Average rectified forward current
Io
60Hz half sin waveform,resistive load,
Io/2 per diode,Tc=102℃Max.
10
A
IFSM
60Hz half sin waveform,
non-repetitive,per diode,Ta=25℃
50
A
Tj
-
150
℃
Tstg
-
-40 ~ 150
℃
Peak forward surge current
Junction temperature(1)
Storage temperature
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
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免费人工找货- 国内价格 香港价格
- 2500+4.938972500+0.61563
- 5000+4.632645000+0.57745
- 国内价格
- 1+66.49268
- 10+18.90061
- 21+15.15454
- 49+10.89765
- 国内价格 香港价格
- 1+12.461521+1.55330
- 10+6.8558010+0.85456
- 50+6.1718050+0.76930
- 100+4.89813100+0.61054
- 500+4.40281500+0.54880
- 1000+4.182671000+0.52136
- 2000+4.056882000+0.50568
- 4000+3.081974000+0.38416