RB085T-40

Schottky barrier diode RB085T-40 Applications Switching power supply Dimensions (Unit : mm) Structure Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability Construction Silicon epitaxial planer (1) (2) (3) 8 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz / 1cyc) (*1) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 45 40 10 100 150 -40 to +150 Unit V V A A C C (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=132C Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR jc Min. - Typ. - Max. 0.55 200 2.5 Unit V A C/W Conditions IF=5A VR=40V junction to case www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.02 - Rev.D RB085T-40 Electrical characteristic curves 10 Ta=150C REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=125C 1 Ta=75C Ta=25°C 0.1 Ta=-25°C 　 Data Sheet Ta=150°C 100000 10000 1000 100 10 1 0.1 Ta=125°C 1000 f=1MHz Ta=75°C CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 Ta=25°C Ta=-25° 10 0.01 0 100 200 300 400 500 600 FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS 0.01 0 10 20 30 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 40 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 530 FORWARD VOLTAGE:VF(mV) Ta=25°C IF=5A n=30pcs 300 REVERSE CURRENT:IR(uA) 250 200 150 100 AVE:20.3uA 50 0 VF DISPERSION MAP IR DISPERSION MAP Ta=25°C VR=40V n=30pcs 800 790 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 780 770 760 750 740 730 720 710 AVE:728.1pF Ta=25°C f=1MHz VR=0V n=10pcs 520 510 500 AVE:504.0mV 490 480 700 Ct DISPERSION MAP 300 RESERVE RECOVERY TIME:trr(ns) 250 200 150 100 50 0 AVE:156.0A Ifsm 1cyc 8.3ms 30 25 20 15 10 5 0 trr DISPERSION MAP AVE:12.30ns Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 1000 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc 100 10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISPERSION MAP 1000 TRANSIENT ℃ THAERMAL IMPEDANCE:Rth ( /W) 100 Ifsm t Mounted on epoxy board IM=100mA 15 IF=1A FORWARD POWER DISSIPATION:Pf(W) Rth(j-a) D=1/2 10 Sin(θ=180) DC PEAK SURGE FORWARD CURRENT:IFSM(A) 10 1ms tim 300us 100 1 Rth(j-c) 5 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0 0.1 10 1000 0 TIME:t(s) Rth-t CHARACTERISTICS 5 10 15 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 20 www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/3 2010.02 - Rev.D RB085T-40 　 Data Sheet 5 30 0A 0V 20 Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) t T VR D=t/T VR=20V Tj=150°C 30 0A 0V 20 Io t T VR D=t/T VR=20V Tj=150°C AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 4 REVERSE POWER DISSIPATION:PR (W) 3 D=1/2 2 DC 1 Sin(θ=180) DC D=1/2 DC D=1/2 10 Sin(θ=180) 10 Sin(θ=180) 0 0 10 20 30 40 REVERSE VOLTAGE : V R(V) VR-PR CHARACTERISTICS 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(°C) Derating Curve"(Io-Tc) AMBIENT TEMPERATURE:Ta(°C) Derating Curve"(Io-Ta) 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) No break at 30kV 25 20 AVE:11.5k 15 10 5 0 C=200pF R=0Ω ESD DISPERSION MAP C=100pF R=1.5kΩ www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/3 2010.02 - Rev.D Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. 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