RB085T-60_11

Data Sheet Schottky barrier diode RB085T-60 Applications Switching power supply Dimensions (Unit : mm) Structure Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability Construction Silicon epitaxial planer (1) (2) (3) Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz / 1cyc) (*1) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 60 60 10 100 150 40 to 150 Unit V V A A C C (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=130C Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR jc Min. - Typ. - Max. 0.58 300 2.5 Unit V A C/W Conditions IF=5A VR=60V junction to case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.D RB085T-60 Electrical characteristic curves 　 Data Sheet 10 Ta=150C Ta=150C 100000 10000 1000 100 10 1 0.1 Ta=125C 1000 f=1MHz REVERSE CURRENT:IR(uA) FORWARD CURRENT:I F(A) Ta=125°C 1 Ta=75C Ta=25C Ta=-25C 0.1 Ta=75C CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 Ta=25C Ta=-25C 10 0.01 0 100 200 300 400 500 600 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 0.01 0 10 20 30 40 50 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 60 1 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 550 300 800 Ta=25C f=1MHz VR=30V n=30pcs 790 FORWARD VOLTAGE:V F(mV) REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 540 Ta=25C IF=5A n=30pcs 250 200 150 100 50 AVE:36.7uA 780 770 760 750 740 730 720 710 AVE:738.5pF Ta=25C f=1MHz VR=0V n=10pcs 530 520 510 AVE:532.6mV 500 VF DISPERSION MAP 0 IR DISPERSION MAP 700 Ct DISPERSION MAP 300 30 Ifsm 1cyc 8.3ms REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:I FSM(A) PEAK SURGE FORWARD CURRENT:I FSM(A) 250 200 150 100 50 0 25 20 15 10 5 0 trr DISPERSION MAP AVE:9.30ns Ta=25C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 1000 Ifsm 8.3ms 100 8.3ms 1cyc AVE:187.0A 10 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISPERSION MAP 1000 100 Mounted on epoxy board IF=5A IM=100mA time 300us 15 DC PEAK SURGE FORWARD CURRENT:I FSM(A) t TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Ifsm Rth(j-a) D=1/2 FORWARD POWER DISSIPATION:Pf(W) 10 1ms 10 Sin(θ=180) 100 1 Rth(j-c) 5 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0.01 0.1 1 10 100 1000 0 0 5 10 15 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 20 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.D RB085T-60 　 Data Sheet 5 30 0A Io t 20 DC T VR D=t/T VR=30V Tj=150C 30 0A Io t 20 DC T VR D=t/T VR=30V Tj=150C AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 3 Sin(θ=180) D=1/2 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 4 0V 0V REVERSE POWER DISSIPATION:PR (W) 2 D=1/2 10 D=1/2 10 Sin(θ=180) DC 1 Sin(θ=180) 0 0 0 10 20 30 40 50 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS 60 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(C) Derating Curve"(Io-Ta) CASE TEMPARATURE:Tc(C) Derating Curve"(Io-Tc) 30 No break at 30kV 25 20 15 AVE:7.50kV 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ELECTROSTATIC DISCHARGE TEST ESD(KV) ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.D Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A