RB088RSM10STFTL1

RB088RSM10STF Schottky Barrier Diode (AEC-Q101 qualified) Data sheet ● Outline VR 100 V Io 10 A IFSM 220 A ● Features ● Inner Circuit High reliability Power mold type Ultra low IR ● Application ● Packaging Specifications Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 12 Quantity(pcs) 4000 Taping Code TL1 Marking RB088RSM10S Switching power supply Freewheel diode Reverse polarity protection ● Structure Silicon epitaxial planar ● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V RM Duty≦0.5 100 V Reverse voltage VR Reverse direct voltage 100 V Average rectified forward current Io 60Hz half sin waveform，resistive load， Tc=153℃Max. 10 A IFSM 60Hz half sin waveform，non-repetitive， Ta=25℃ 220 A Tj - 175 ℃ Tstg - -55 ～ 175 ℃ Peak forward surge current Junction temperature(1) Storage temperature Note(1) To avoid occurrence of thermal runaway ， actual board is to be designed to fulfill dPd/dTj