RB088RSM10S
Schottky Barrier Diode
Data sheet
● Outline
VR
100
V
Io
10
A
IFSM
220
A
● Features
● Inner Circuit
High reliability
Power mold type
Ultra low IR
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
12
Quantity(pcs)
4000
Taping Code
TL1
Marking
RB088RSM10S
Switching power supply
Freewheel diode
Reverse polarity protection
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V RM
Duty≦0.5
100
V
Reverse voltage
VR
Reverse direct voltage
100
V
Average rectified forward current
Io
60Hz half sin waveform,resistive load,
Tc=153℃Max.
10
A
IFSM
60Hz half sin waveform,non-repetitive,
Ta=25℃
220
A
Tj
-
175
℃
Tstg
-
-55 ~ 175
℃
Peak forward surge current
Junction temperature(1)
Storage temperature
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
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免费人工找货- 国内价格
- 5+11.42664
- 10+9.40500
- 50+7.99865
- 100+6.84719
- 200+6.48682
- 500+6.06491
- 1000+5.04530
- 国内价格 香港价格
- 1+21.264721+2.57250
- 10+5.6138910+0.67914
- 50+4.0261250+0.48706
- 100+3.49957100+0.42336
- 500+3.14313500+0.38024
- 1000+3.078331000+0.37240
- 2000+3.021622000+0.36554
- 4000+2.981124000+0.36064
- 国内价格
- 5+7.31885
- 50+6.95228
- 100+6.25664
- 500+5.31939
- 2000+4.25510
- 国内价格
- 50+6.95228
- 100+6.25664
- 500+5.31939
- 2000+4.25510