RB095B-30_09

Schottky barrier Diode RB095B-30 Applications General rectification Dimensions(Unit : mm) Land size figure(Unit : mm) 6.0 Features 1)Power mold type.(CPD) 2)Low VF 3)High reliability CPD 16 1.6 2.3 2.3 Construction Silicon epitaxial planar Structure (2) (1) (3) Taping dimensions (Unit : mm) Absolute maximum ratings(Ta=25° C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(*1) Forward current surge peak (60Hz 1cyc)(*1) ・ Junction temperature Storage temperature Limits Symbol VRM 35 VR 30 6 Io IFSM 35 150 Tj -40 to +150 Tstg (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=125 °C Unit V V A A °C °C Electrical characteristic (Ta=25° C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR θjc Min. - Typ. - Max. 0.425 200 6.0 Unit V µA ° C/W IF=3.0A VR=30V junction to case www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 3.0 2.0 Conditions 6.0 1/3 2009.11 - Rev.F RB095B-30 　 Data Sheet Ta=150° C 10 Ta=150° C FORWARD CURRENT:IF(A) Ta=125° C 1 Ta=25° C Ta=75° C Ta=-25° C REVERSE CURRENT : IR(µA) 1000000 100000 10000 Ta=125° C 10000 f=1MHz Ta=75° C 1000 100 10 1 0.1 Ta=-25° C Ta=25° C CAPACITANCE BETWEEN TERMINALS : Ct(pF) 1000 0.1 100 0.01 0 100 200 300 400 500 600 700 FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS 0.01 0 5 10 15 20 25 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 30 10 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 440 Ta=25° C IF=3A n=30pcs 200 180 REVERSE CURRENT : IR(µA) 160 140 120 100 80 60 40 20 AVE:41.0µA CAPACITANCE BETWEEN TERMINALS : Ct(pF) Ta=25° C VR=30V n=30pcs 2000 1950 1900 1850 1800 1750 1700 1650 1600 1550 1500 Ct DISPERSION MAP IR DISPERSION MAP AVE:1617.3pF Ta=25° C f=1MHz VR=0V n=10pcs FORWARD VOLTAGE : VF(mV) 430 420 410 AVE:402.0mV 400 390 VF DISPERSION MAP 0 300 RESERVE RECOVERY TIME : trr(ns) PEAK SURGE FORWARD CURRENT : IFSM(A) 250 200 150 AVE:63.0A 100 50 0 IFSM DISPERSION MAP Ifsm 8.3ms 1cyc 30 25 20 15 10 5 0 trr DISPERSION MAP AVE:19.3ns PEAK SURGE FORWARD CURRENT : IFSM(A) Ta=25° C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 1000 Ifsm 8.3ms 8.3ms 1cyc 100 10 1 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 5 Rth(j-a) Rth(j-c) 1000 100 TRANSIENT ° THAERMAL IMPEDANCE : Rth ( C/W) PEAK SURGE FORWARD CURRENT : IFSM(A) Ifsm t 4 FORWARD POWER DISSIPATION : Pf(W) D=1/2 DC 10 3 Sin(θ=180) 100 Mounted on epoxy board 1 IM=100mA IF=3A 2 1ms time 1 300µs 0.01 0.1 1 10 100 1000 0 0 5 10 15 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 10 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 TIME : t(s) Rth-t CHARACTERISTICS www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.11 - Rev.F RB095B-30 　 Data Sheet 10 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 20 0A 15 0V t T Io AVERAGE RECTIFIED FORWARD CURRENT : Io(A) VR D=t/T VR=15V Tj=150° C 20 0A 15 DC 10 D=1/2 5 Sin(θ=180) 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta(° C) Derating Curve"(Io-Ta) CASE TEMPARATURE : Tc( ° C) Derating Curve"(Io-Tc) 0V t T Io VR D=t/T VR=15V Tj=150° C 8 REVERSE POWER DISSIPATION : PR (W) Sin(θ=180) 6 D=1/2 DC 10 DC D=1/2 4 2 5 Sin(θ=180) 0 0 0 10 20 30 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ No break at 30kV ESD DISPERSION MAP www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 3/3 2009.11 - Rev.F Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. 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