RB095B-30_11

Data Sheet Schottky barrier Diode RB095B-30 Applications General rectification Dimensions(Unit : mm) Land size figure(Unit : mm) 6.0 3)High reliability CPD 2.3 2. (2) Construction Silicon epitaxial planar Structure (1) (3) Taping dimensions(Unit : mm) Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(*1) Forward current surge peak (60Hz・1cyc)(*1) Junction temperature Storage temperature Limits Symbol 35 VRM 30 VR 6 Io 35 IFSM 150 Tj 40 to 150 Tstg (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=125C Absolute maximum ratings (Ta=25C) Parameter Unit V V A A C C Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR jc Min. - Typ. - Max. 0.425 200 6.0 Unit V μA C/W IF=3.0A VR=30V junction to case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 3.0 2.0 Conditions Features 1)Power mold type.(CPD) 2)Low VF 16 1.6 6.0 2011.04 - Rev.F RB095B-30 　 Data Sheet Ta=150 C 10 Ta=150 C 1000000 100000 Ta=125 C 10000 f=1MHz Ta=125 C 1 Ta=25 C Ta=75 C Ta=-25 C 10000 Ta=75 C 1000 100 10 1 0.1 Ta=-25 C Ta=25 C CAPACITANCE BETWEEN TERMINALS : Ct(pF) REVERSE CURRENT : IR(A) FORWARD CURRENT:I F(A) 1000 0.1 100 0.01 0 100 200 300 400 500 600 700 0.01 0 5 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 10 15 20 25 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 30 10 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 440 Ta=25 C IF=3A n=30pcs 200 180 2000 FORWARD VOLTAGE : V F(mV) 430 160 140 120 100 80 60 40 20 AVE:41.0A CAPACITANCE BETWEEN TERMINALS : Ct(pF) REVERSE CURRENT : IR(A) Ta=25 C VR=30V n=30pcs 1950 1900 1850 1800 1750 1700 1650 1600 1550 1500 Ct DISPERSION MAP Ta=25 C f=1MHz VR=0V n=10pcs 420 410 AVE:402.0mV AVE:1617.3pF 400 390 VF DISPERSION MAP 0 IR DISPERSION MAP 300 30 1000 REVERSE RECOVERY TIME : trr(ns) PEAK SURGE FORWARD CURRENT : I FSM(A) 250 200 150 Ifsm 8.3ms 1cyc 25 20 15 10 5 0 AVE:19.3ns PEAK SURGE FORWARD CURRENT : I FSM(A) Ta=25 C IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms 1cyc 100 AVE:63.0A 100 50 0 IFSM DISPERSION MAP 10 1 10 100 trr DISPERSION MAP NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 5 Rth(j-a) Rth(j-c) 1000 100 TRANSIENT THAERMAL IMPEDANCE : Rth ( C/W) PEAK SURGE FORWARD CURRENT : I FSM(A) Ifsm t 4 D=1/2 DC FORWARD POWER DISSIPATION : Pf(W) 10 3 Sin(=180) 100 Mounted on epoxy board 1 IM=100mA IF=3A 2 1ms time 1 300s 0.01 0.1 1 10 100 1000 0 0 5 10 15 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 10 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 TIME : t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.F RB095B-30 　 Data Sheet 10 20 0A Io 20 0A Io t DC 10 D=1/2 5 Sin(=180) T VR D=t/T VR=15V Tj=150 C AVERAGE RECTIFIED FORWARD CURRENT : Io(A) AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 8 REVERSE POWER DISSIPATION : PR (W) Sin(=180) 15 0V t T VR D=t/T VR=15V Tj=150 C 15 0V 6 D=1/2 DC 10 DC D=1/2 4 2 5 Sin(180) 0 0 10 20 30 0 0 25 50 75 100 125 150 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE : Ta( C) Derating Curve"(Io-Ta) 0 0 25 50 75 100 125 150 CASE TEMPARATURE : Tc( C) Derating Curve"(Io-Tc) 30 No break at 30kV 25 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.F Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A