RB095B-40

Schottky barrier diode RB095B-40 Applications General rectification (Common cathode dual chip) Dimensions(Unit : mm) Land size figure(Unit : mm) 6.0 3)High reliability CPD 2.3 2.3 (2) Construction Silicon epitaxial planar Structure Taping dimensions(Unit : mm) (1) (3) Limits Symbol 45 VRM 40 VR 6 Io 45 IFSM 150 Tj -40 to +150 Tstg (*1) Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=120 °C Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(*1) Forward current surge peak (60Hz・1cyc)(*1) Junction temperature Storage temperature Absolute maximum ratings (Ta=25°C) Parameter Unit V V A A °C °C Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR θjc Min. - Typ. - Max. 0.55 100 6.0 Unit V µA °C/W IF=3.0A VR=40V junction to case www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 1/3 2009.11 - Rev.F 3.0 2.0 Conditions Features 1)Power mold type.(CPD3) 2)Low VF 1.6 1.6 6.0 RB095B-40 Electrical characteristic curves 10 　 Data Sheet 1000000 Ta=150° C 100000 Ta=-25° C REVERSE CURRENT : IR(µA) 10000 1000 100 1000 Ta=150° C Ta=125° C CAPACITANCE BETWEEN TERMINALS : Ct(pF) f=1MHz FORWARD CURRENT : IF(A) 1 Ta=125° Ta=25° C Ta=75° C Ta=75° C 100 Ta=25° C 10 1 0.1 0.01 0 5 10 15 20 25 30 35 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 40 Ta=-25° C 0.1 10 0.01 1 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 0 100 200 300 400 500 600 700 FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS 500 FORWARD VOLTAGE : VF(mV) 490 CAPACITANCE BETWEEN TERMINALS : Ct(pF) REVERSE CURRENT : IR(µA) Ta=25° C IF=3A n=30pcs 200 Ta=25° C VR=40V n=30pcs 650 640 630 620 610 600 590 580 570 560 AVE:617.9pF Ta=25° C f=1MHz VR=0V n=10pcs 150 480 100 470 AVE:472.9mV 460 50 AVE:14.2µA 0 450 VF DISPERSION MAP 550 IR DISPERSION MAP Ct DISPERSION MAP 300 RESERVE RECOVERY TIME : trr(ns) PEAK SURGE FORWARD CURRENT : IFSM(A) 250 200 150 100 50 AVE:76.0A 0 IFSM DISPERSION MAP 30 25 20 15 10 AVE:11.40ns 5 0 trr DISPERSION MAP Ta=25° C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 1000 PEAK SURGE FORWARD CURRENT : IFSM(A) Ifsm 8.3ms 1cyc Ifsm 8.3ms 100 8.3ms 1cyc 10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1000 TRANSIENT ° THAERMAL IMPEDANCE : Rth ( C/W) PEAK SURGE FORWARD CURRENT : IFSM(A) 100 10 Rth(j-a) Rth(j-c) FORWARD POWER DISSIPATION : Pf(W) Ifs t 10 D=1/2 5 Sin(θ=180) DC 100 Mounted on epoxy board 1 IM=100mA IF=1A 1ms time 10 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 300µs 0.01 0.1 1 10 100 1000 0 0 2 4 6 8 10 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS TIME : t(s) Rth-t CHARACTERISTICS www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.11 Rev.F RB095B-40 　 15 Data Sheet 15 10 0A 0V t DC Io AVERAGE RECTIFIED FORWARD CURRENT : Io(A) VR T D=t/T VR=20V Tj=150° C 0A 0V t DC Io VR T D=t/T VR=20V Tj=150° C 8 REVERSE POWER DISSIPATION : PR (W) AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 10 10 D=1/2 6 D=1/2 4 DC 2 Sin(θ=180) D=1/2 5 5 Sin(θ=180) Sin(θ＝180) 0 0 10 20 30 40 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta(° C) Derating Curve"(Io-Ta) CASE TEMPARATURE : Tc( ° C) Derating Curve"(Io-Tc) 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) Np break at 30kV 25 20 15 AVE:15.6kV 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 3/3 2009.11 Rev.F Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. 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