RB095B-40_11

Data Sheet Schottky barrier diode RB095B-40 Applications General rectification (Common cathode dual chip) Dimensions(Unit : mm) Land size figure(Unit : mm) 6.0 3)High reliability CPD 2.3 2.3 (2) Construction Silicon epitaxial planar Structure Taping dimensions(Unit : mm) (1) (3) Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(*1) Forward current surge peak (60Hz・1cyc)(*1) Junction temperature Storage temperature Limits Symbol 45 VRM 40 VR 6 Io 45 IFSM 150 Tj 40 to 150 Tstg (*1) Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=120 C Absolute maximum ratings (Ta=25C) Parameter Unit V V A A C C Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR jc Min. - Typ. - Max. 0.55 100 6.0 Unit V A C/W IF=3.0A VR=40V junction to case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.F 3.0 2.0 Conditions Features 1)Power mold type.(CPD3) 2)Low VF 1.6 1.6 6.0 RB095B-40 Electrical characteristic curves 10 　 Data Sheet 1000000 Ta=150 C 100000 Ta=-25 C Ta=150 C Ta=125 C 1000 f=1MHz 1 Ta=125 Ta=25 C Ta=75 C 10000 1000 100 10 1 0.1 0.01 0 5 10 15 20 25 30 35 40 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS Ta=25 C Ta=-25 C Ta=75 C CAPACITANCE BETWEEN TERMINALS : Ct(pF) FORWARD CURRENT : I F(A) REVERSE CURRENT : IR(A) 100 0.1 10 0.01 1 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 0 100 200 300 400 500 600 700 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 500 490 CAPACITANCE BETWEEN TERMINALS : Ct(pF) FORWARD VOLTAGE : V F(mV) REVERSE CURRENT : IR(A) Ta=25 C IF=3A n=30pcs 200 Ta=25 C VR=40V n=30pcs 650 640 630 620 610 600 590 580 570 560 AVE:617.9pF Ta=25 C f=1MHz VR=0V n=10pcs 150 480 100 470 AVE:472.9mV 460 50 AVE:14.2A 0 450 VF DISPERSION MAP 550 IR DISPERSION MAP Ct DISPERSION MAP 300 30 1000 REVERSE RECOVERY TIME : trr(ns) PEAK SURGE FORWARD CURRENT : I FSM(A) 250 200 150 100 50 Ifsm 8.3ms 1cyc 25 20 15 10 AVE:11.40ns 5 0 PEAK SURGE FORWARD CURRENT : I FSM(A) Ta=25 C IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 100 8.3ms 1cyc AVE:76.0A 0 IFSM DISPERSION MAP 10 trr DISPERSION MAP 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1000 100 10 Rth(j-a) Ifsm t TRANSIENT THAERMAL IMPEDANCE : Rth ( C/W) PEAK SURGE FORWARD CURRENT : I FSM(A) 10 Rth(j-c) FORWARD POWER DISSIPATION : Pf(W) D=1/2 5 Sin(=180) DC 100 Mounted on epoxy board 1 IM=100mA IF=1A time 1ms 10 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 300s 0 0.01 0.1 1 10 100 1000 0 2 4 6 8 10 TIME : t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.F RB095B-40 　 Data Sheet 10 15 0A 0V t DC Io VR T D=t/T VR=20V Tj=150 C 15 0A 0V t DC Io VR T D=t/T VR=20V Tj=150 C AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 8 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) REVERSE POWER DISSIPATION : PR (W) 10 10 D=1/2 6 D=1/2 4 DC 2 Sin(180) D=1/2 5 5 Sin(=180) Sin(θ＝180) 0 0 10 20 30 40 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta( C) Derating Curve"(Io-Ta) CASE TEMPARATURE : Tc( C) Derating Curve"(Io-Tc) 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) Np break at 30kV 25 20 15 AVE:15.6kV 10 5 0 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.F Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A