RB095B-60

Schottky Barrier Diode RB095B-60 Applications General rectification Dimensions(Unit : mm) Land size figure(Unit : mm) 6.0 3) High reliability CPD 2.3 2.3 (2) Construction Silicon epitaxial planar Structure (1) Taping dimensions(Unit : mm) 4.0±0.1 2.0±0.05 8.0±0.1 φ1.55±0.1 　　　　　 0 3.0 2.0 (3) Features 1) Power mold type. (CPD3) 2) Low VF 1.6 1.6 6.0 0.4±0.1 2.5± 0.1 7.5± 0.0 5 10.1± 0.1 6.8±0.1 8.0±0.1 φ3.0±0.1 0～ 0.5 13.5± 0.2 10.1± 0.1 2.7±0.2 TL Limits Symbol 60 VRM 60 VR 6 Io 45 IFSM 150 Tj -40 to +150 Tstg (*1) Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=112 °C Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak(60Hz・1cyc)(*1) Junction temperature Storage temperature Absolute maximum ratings (Ta=25°C) Parameter Unit V V A A °C °C Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR θjc Min. - Typ. - Max. 0.58 300 6.0 Unit V µA °C/W Conditions IF=3.0A VR=60V junction to case www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 1/3 2009.11 - Rev.G 16.0± 0.2 RB095B-60 Electrical charcteristics curves 10 FORWARD CURRENT : IF (A) Data Sheet 1000000 REVERSE CURRENT : IR (uA) Ta=150° C Ta=125° C 1000 f=1MHz Ta=125° C 1 Ta=75° C 0.1 Ta=25° C Ta=-25° C 10000 1000 100 10 1 0.1 0.01 0 10 20 30 CAPACITANCE BETWEEN TERMINALS : Ct (pF) Ta=150° C 100000 Ta=75° C Ta=25° C 100 10 Ta=-25° C 0.01 0 100 200 300 400 500 600 700 800 FORWARD VOLTAGE : V F (mV) VF-IF CHARACTERISTICS 1 40 50 60 0 10 20 30 REVERSE VOLTAGE : VR (V) VR-IR CHARACTERISTICS REVERSE VOLTAGE : VR (V) VR-Ct CHARACTERISTICS 550 FORWARD VOLTAGE : VF (mV) REVERSE CURRENT : IR (uA) 200 160 140 120 100 80 60 40 20 0 VF DISPERSION MAP IR DISPERSION MAP 30 RESERVE RECOVERY TIME : trr (ns) Ifsm 8.3 1cyc 25 20 15 10 5 0 trr DISPERSION MAP Mounted on epoxy board 800 CAPACITANCE BETWEEN TERMINALS : Ct (pF) Ta=25° C VR=60V n=30pcs 540 530 520 510 AVE:425.2mV σ:1.6771mV Ta=25° C IF=3A n=30pcs 180 750 700 650 600 550 500 450 400 350 300 Ct DISPERSION MAP Ta=25° C f=1MHz VR=0V n=10pcs AVE:532.4mV AVE:514.4pF AVE:20.8uA 500 300 PEAK SURGE FORWARD CURRENT : IFSM (A) 250 200 150 AVE:73.0A 100 50 0 1000 PEAK SURGE FORWARD CURRENT : IFSM (A) Ta=25° C IF=0.5A IR=1A Irr=0.25*I R n=10pcs Ifsm 8.3m 8.3m 1cyc 100 AVE:8.30ns 10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISPERSION MAP 1000 PEAK SURGE FORWARD CURRENT : IFSM (A) Ifsm t 100 IM=100mA TRANSIENT THAERMAL IMPEDANCE : Rth ( ° C/W ) 1ms tim IF=5A 10 Rth(j-a) FORWARD POWER DISSIPATION : Pf (W) 8 6 Sin(θ = 180) 4 2 0 D=1/2 DC 300us 10 100 Rth(j-c) 1 10 1 TIME : t (ms) IFSM-t CHARACTERISTICS 10 100 0.1 0.001 0.1 10 1000 0 TIME : t (s) Rth-t CHARACTERISTICS 5 10 AVERAGE RECTIFIED FORWARD CURRENT ： Io (A) Io-Pf CHARACTERISTICS 15 www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.11 - Rev.F RB095B-60 Data Sheet 15 15 Sin(θ = 180) 0A 0V DC Io AVERAGE RECTIFIED FORWARD CURRENT : Io (A) t T VR D=t/T VR=30V Tj=150°C 15 0A 0V DC D=1/2 Io t T VR D=t/T VR=30V Tj=150°C REVERSE POWER DISSIPATION : PR (W) 10 D=1/2 DC 5 AVERAGE RECTIFIED FORWARD CURRENT : Io (A) 10 D=1/2 5 Sin(θ = 180) 10 5 Sin(θ = 180) 0 0 10 20 30 40 50 60 REVERSE VOLTAGE : VR (V) VR-PR CHARACTERISTICS 30 ELECTROSTATIC DISCHARGE TEST ESD (KV) No break at 30kV 25 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ AVE:16.5kV 0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta (°C) Derating Curve (Io-Ta) 150 0 0 25 50 75 100 125 150 CASE TEMPARATURE : Tc(°C) Derating Curve(Io-Tc) ESD DISPERSION MAP www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 3/3 2009.11 - Rev.G Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. 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