RB095B-60_11

Data Sheet Schottky Barrier Diode RB095B-60 Applications General rectification Dimensions(Unit : mm) Land size figure(Unit : mm) 6.0 3) High reliability CPD 2.3 2.3 (2) Construction Silicon epitaxial planar Structure (1) Taping dimensions(Unit : mm) 4.0±0.1 2.0±0.05 8.0±0.1 φ1.55±0.1 　　　　　 0 3.0 2.0 Features 1) Power mold type. (CPD3) 2) Low VF 1.6 1.6 6.0 (3) 0.4±0.1 2.5±0.1 7.5±0.05 10.1±0.1 6.8±0.1 8.0±0.1 φ3.0±0.1 0～0.5 13.5±0.2 10.1±0.1 TL 16.0±0.2 2.7±0.2 Limits Symbol 60 VRM 60 VR 6 Io 45 IFSM 150 Tj 40 to 150 Tstg (*1) Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=112 C Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak(60Hz・1cyc)(*1) Junction temperature Storage temperature Absolute maximum ratings (Ta=25C) Parameter Unit V V A A C C Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR jc Min. - Typ. - Max. 0.58 300 6.0 Unit V μA C/W Conditions IF=3.0A VR=60V junction to case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.G RB095B-60 Electrical charcteristics curves 10 1000000 Ta=150  C Ta=125 C Data Sheet 1000 f=1MHz REVERSE CURRENT : IR (uA) FORWARD CURRENT : IF (A) Ta=150C Ta=125C 1 Ta=75 C Ta=25 C Ta=-25 C 0.1 10000 1000 100 10 1 0.1 0.01 0 10 20 30 CAPACITANCE BETWEEN TERMINALS : Ct (pF) 100000 Ta=75 C 100 Ta=25 C 10 Ta=-25  C 0.01 0 100 200 300 400 500 600 700 800 FORWARD VOLTAGE : VF (mV) VF-I F CHARACTERISTICS 1 40 50 60 0 10 20 30 REVERSE VOLTAGE : VR (V) VR-I R CHARACTERISTICS REVERSE VOLTAGE : VR (V) VR-Ct CHARACTERISTICS 800 550 FORWARD VOLTAGE : VF (mV) REVERSE CURRENT : IR (uA) 200 160 140 120 100 80 60 40 20 0 VF DISPERSION MAP I R DISPERSION MAP AVE:20.8uA CAPACITANCE BETWEEN TERMINALS : Ct (pF) 540 530 520 510 AVE:425.2mV σ:1.6771mV Ta=25 C IF=3A n=30pcs 180 Ta=25 C VR=60V n=30pcs 750 700 650 600 550 500 450 400 350 300 AVE:514.4pF Ta=25 C f=1MHz VR=0V n=10pcs AVE:532.4mV 500 Ct DISPERSION MAP 1000 Ta=25 C IF=0.5A IR=1A Irr=0.25*IR n=10pcs PEAK SURGE FORWARD CURRENT : IFSM (A) 25 20 15 10 5 0 AVE:8.30ns PEAK SURGE FORWARD CURRENT : IFSM (A) 250 200 150 100 50 0 Ifsm 8. 3 1cyc REVERSE RECOVERY TIME : trr (ns) 300 30 Ifsm 8.3ms 8.3ms 1cyc 100 AVE:73.0A 10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISPERSION MAP trr DISPERSION MAP Mounted on epoxy board TRANSIENT THAERMAL IMPEDANCE : Rth (° C/W ) 1000 PEAK SURGE FORWARD CURRENT : IFSM (A) Ifsm t 100 IM=100mA 1ms time IF=5A 10 Rth(j-a) FORWARD POWER DISSIPATION : Pf (W) 8 6 Sin(θ = 180) 4 2 0 D=1/2 DC 300us 10 100 Rth(j-c) 1 10 1 TIME : t (ms) IFSM-t CHARACTERISTICS 10 100 0.1 0.001 0.1 10 1000 0 TIME : t (s) Rth-t CHARACTERISTICS 5 10 AVERAGE RECTIFIED FORWARD CURRENT ： Io (A) Io-Pf CHARACTERISTICS 15 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.F RB095B-60 Data Sheet 15 15 0A 0V DC Io D=t/T VR=30V Tj=150 C 15 AVERAGE RECTIFIED FORWARD CURRENT : Io (A) AVERAGE RECTIFIED FORWARD CURRENT : Io (A) Sin( = 180) t T VR 0A 0V DC D=1/2 Io t T VR D=t/T VR=30V Tj=150C REVERSE POWER DISSIPATION : PR (W) 10 D=1/2 DC 5 10 D=1/2 5 Sin(180) 10 5 Sin( = 180) 0 0 10 20 30 40 50 60 REVERSE VOLTAGE : VR (V) VR-PR CHARACTERISTICS 30 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta ( C) Derating Curve (Io-Ta) 0 0 25 50 75 100 125 150 CASE TEMPARATURE : Tc( C) Derating Curve(Io-Tc) ELECTROSTATIC DISCHARGE TEST ESD (KV) No break at 30kV 25 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ AVE:16.5kV ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.F Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A