RB095B-90

Schottky Barrier Diode RB095B-90 Applications General rectification Dimensions(Unit : mm) Land size figure(Unit : mm) 6.0 3)High reliability CPD 2.3 2.3 Construction Silicon epitaxial planar ROHM : CPD JEITA : SC-63 Manufacture Date Structure (2) (1) (3) Taping specifications(Unit : mm) 2.0 ±0.05 4.0 ±0.1 8.0 ±0.1 2.5 ±0.1 φ1.55 ±0.1    0    3.0 2.0 Features 1)Power mold type.(CPD) 2)Low VF 1.6 1.6 6.0 0.4 ±0.1 7.5 ±0.05 16.0 ±0.2 TL 10.1 ±0.1 13.5 ±0.2 6.8 ±0.1 8.0 ±0.1 φ3.0 ±0.1 0 ∼0.5 10.1 ±0.1 2.7 ±0.2 Limits Symbol 90 VRM 90 VR 6 Io 45 IFSM 150 Tj -40 to +150 Tstg (*1) Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=122 °C Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz / 1cyc)(*1) Junction temperature Storage temperature Absolute maximum ratings (Ta=25°C) Parameter Unit V V A A °C °C Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR θjc Min. - Typ. - Max. 0.75 150 6.0 Unit V µA °C/W Conditions IF=3.0A VR=90V junction to case www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 1/3 2009.11 - Rev.F RB095B-90 Electrical characteristics curves Data Sheet 10 100000 10000 Ta=150° C REVERSE CURRENT : IR(uA) Ta=150° C Ta=125° C CAPACITANCE BETWEEN TERMINALS : Ct(pF) 1000 f=1MHz FORWARD CURRENT : IF(A) 1000 100 10 1 0.1 0.01 Ta=75° C Ta=25° C 1 Ta=125° C Ta=75° C Ta=25° C Ta=-25° C 100 0.1 Ta=-25° C 10 0.01 0 100 200 300 400 500 600 700 800 900 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 1 0 10 20 30 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 0 10 20 30 40 50 60 70 80 90 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 740 200 Ta=25° C IF=3A n=30pcs 180 REVERSE CURRENT:IR(uA) 160 140 120 100 80 60 40 20 AVE : 13.7uA Ta=25° C VR=90V n=30pcs 400 390 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 380 370 360 350 340 330 320 310 300 AVE : 357.9pF Ta=25° C f=1MHz VR=0V n=10pcs FORWARD VOLTAGE : VF(mV) 730 720 AVE : 711.1mV 710 700 690 0 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 300 RESERVE RECOVERY TIME:trr(ns) 250 200 150 100 50 0 IFSM DISPERSION MAP Ifsm 1cyc 8.3ms 30 25 20 15 10 5 0 trr DISPERSION MAP Ta=25° C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 1000 Ifsm 8.3ms 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc 100 AVE : 86.0A AVE : 8.30ns 10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.11 - Rev.F RB095B-90 Data Sheet 1000 100 10 Rth(j-a) PEAK SURGE FORWARD CURRENT:I FSM(A) t TRANSIENT THAERMAL IMPEDANCE:Rth (° C/W) Ifsm 8 FORWARD POWER DISSIPATION : Pf(W) 10 Rth(j-c) D=1/2 6 Sin(θ=180) DC 100 Mouted on epoxy board 1 IM=100mA 4 IF=3A tim 1ms 2 300us 0.1 0.001 0 0.01 0.1 1 10 100 1000 0 2 4 6 8 10 TIME : t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 10 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100 5 15 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io t 10 D=1/2 DC T VR D=t/T VR=45V Tj=150° C AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 15 0A 0V t DC T Io VR D=t/T VR=45V Tj=150° C 4 REVERSE POWER DISSIPATION : PR (W) Sin(θ=180) 3 DC D=1/2 10 D=1/2 5 2 5 Sin(θ=180) Sin(θ=180) 1 0 0 10 20 30 40 50 60 70 80 90 REVERSE VOLTAGE : V R(V) VR-PR CHARACTERISTICS 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(° C) DERATING CURVE(Io-Ta) 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(° C) DERATING CURVE(Io-Tc) 30 25 AVE : 26.70kV 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ELECTROSTATIC DISCHARGE TEST ESD(KV) AVE : 9.60kV ESD DISPERSION MAP www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 3/3 2009.11 - Rev.F Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. 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