RB095B-90_11

Data Sheet Schottky Barrier Diode RB095B-90 Applications General rectification Dimensions(Unit : mm) Land size figure(Unit : mm) 6.0 3)High reliability CPD 2.3 2.3 Construction Silicon epitaxial planar ROHM : CPD JEITA : SC-63 Manufacture Date Structure (2) (1) (3) Taping specifications(Unit : mm) 2.0 ±0.05 4.0 ±0.1 8.0 ±0.1 2.5 ±0.1 φ1.55 ±0.1    0    3.0 2.0 Features 1)Power mold type.(CPD) 2)Low VF 1.6 1.6 6.0 0.4 ±0.1 7.5 ±0.05 16.0 ±0.2 TL 10.1 ±0.1 13.5 ±0.2 6.8 ±0.1 8.0 ±0.1 φ3.0 ±0.1 0 ∼0.5 10.1 ±0.1 2.7 ±0.2 Limits Symbol 90 VRM 90 VR 6 Io 45 IFSM 150 Tj 40 to 150 Tstg (*1) Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=122 C Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz / 1cyc)(*1) Junction temperature Storage temperature Absolute maximum ratings (Ta=25C) Parameter Unit V V A A C C Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR jc Min. - Typ. - Max. 0.75 150 6.0 Unit V A C/W Conditions IF=3.0A VR=90V junction to case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.F RB095B-90 Electrical characteristics curves Data Sheet CAPACITANCE BETWEEN TERMINALS : Ct(pF) 10 100000 10000 Ta=150 C Ta=150 C Ta=125 C 1000 f=1MHz 100 REVERSE CURRENT : IR(uA) FORWARD CURRENT : I F(A) 1000 100 10 1 0.1 0.01 Ta=75 C Ta=25 C 1 Ta=125 C Ta=75 C Ta=25 C Ta=-25 C 0.1 Ta=-25 C 10 0.01 0 100 200 300 400 500 600 700 800 900 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 1 0 10 20 30 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 0 10 20 30 40 50 60 70 80 90 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 740 FORWARD VOLTAGE : V F(mV) 200 Ta=25 C IF=3A n=30pcs 180 REVERSE CURRENT:IR(uA) 140 120 100 80 60 40 20 AVE : 13.7uA CAPACITANCE BETWEEN TERMINALS:Ct(pF) 730 160 Ta=25 C VR=90V n=30pcs 400 390 380 370 360 350 340 330 320 310 300 AVE : 357.9pF Ta=25 C f=1MHz VR=0V n=10pcs 720 AVE : 711.1mV 710 700 690 0 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 300 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:I FSM(A) 30 Ifsm 1cyc 8.3ms 1000 PEAK SURGE FORWARD CURRENT:I FSM(A) 250 200 150 100 50 0 25 20 15 10 5 0 AVE : 8.30ns Ta=25 C IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms 1cyc 100 AVE : 86.0A 10 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.F RB095B-90 Data Sheet 1000 100 10 Rth(j-a) PEAK SURGE FORWARD CURRENT:I FSM(A) t TRANSIENT THAERMAL IMPEDANCE:Rth ( C/W) Ifsm 8 FORWARD POWER DISSIPATION : Pf(W) 10 Rth(j-c) D=1/2 6 Sin(=180) DC 100 Mouted on epoxy board 1 IM=100mA 4 IF=3A tim 1ms 2 300us 0.1 0.001 0 0.01 0.1 1 10 100 1000 0 2 4 6 8 10 TIME : t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 10 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100 5 15 0A 0V Io t 10 D=1/2 DC T VR D=t/T VR=45V Tj=150 C 15 0A 0V t Io VR D=t/T VR=45V Tj=150 C AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION : PR (W) Sin(=180) 3 DC D=1/2 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 4 10 DC T D=1/2 5 2 5 Sin(=180) Sin(=180) 1 0 0 10 20 30 40 50 60 70 80 90 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta( C) DERATING CURVE(Io-Ta) 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc( C) DERATING CURVE(Io-Tc) 30 25 AVE : 26.70kV 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k ELECTROSTATIC DISCHARGE TEST ESD(KV) AVE : 9.60kV ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.F Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A