RB095T-40

Schottky barrier diode RB095T-40 Applications Switching power supply Dimensions (Unit : mm) Structure Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability Construction Silicon epitaxial planer (1) (2) (3) Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz / 1cyc) (*1) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 45 40 6 100 150 -40 to +150 Unit V V A A C C (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=136C Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR jc Min. - Typ. - Max. 0.55 0.1 3 Unit V mA C/W Conditions IF=3A VR=40V junction to case www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.02 - Rev.E RB095T-40 Electrical characteristic curves 　 Data Sheet 10 Ta=150℃ 1000000 100000 REVERSE CURRENT:IR(uA) Ta=-25℃ 10000 Ta=150℃ Ta=125℃ 1000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD CURRENT:IF(A) 1 Ta=125℃ Ta=75℃ 0.1 Ta=25℃ Ta=75℃ 1000 100 10 1 0.1 0.01 Ta=-25℃ Ta=25℃ 100 10 0.01 0 100 200 300 400 500 600 700 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 1 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 500 FORWARD VOLTAGE:VF(mV) Ta=25℃ IF=3A n=30pcs 200 180 REVERSE CURRENT:IR(uA) 160 140 120 100 80 60 40 20 AVE:14.2uA Ta=25℃ VR=40V n=30pcs 650 640 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 630 620 610 600 590 580 570 560 550 AVE:617.9pF 490 Ta=25℃ f=1MHz VR=0V n=10pcs 480 470 460 AVE:472.9mV 450 0 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 300 250 200 150 100 50 AVE:178.0A 0 1cyc 8.3ms RESERVE RECOVERY TIME:trr(ns) 30 25 20 15 10 5 0 trr DISPERSION MAP 1000 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc 100 AVE:11.40ns 10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISPERSION MAP 1000 100 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) IM=100mA 10 IF=3A PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm t 10 Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) 1ms time 300us D=1/2 5 Si(=180) DC 100 1 Rth(j-c) 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0.01 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 0 0 4 6 8 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 2 10 www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/3 2010.02 - Rev.E RB095T-40 　 15 Data Sheet 10 15 0A 0V t DC Io VR AVERAGE RECTIFIED FORWARD CURRENT:Io(A) D=t/T VR=20V Tj=150℃ 0A 0V DC t Io VR D=t/T VR=20V T Tj=150℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 8 REVERSE POWER DISSIPATION:PR (W) 6 DC 4 Sin(=180) D=1/2 10 D=1/2 T 10 D=1/2 5 Sin(θ=180) 5 Sin(θ=180) 2 0 0 10 20 30 40 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta( C) Derating Curve"(Io-Ta) 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc( C) Derating Curve"(Io-Tc) 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) No break at 30kV 25 20 15 AVE:15.6kV 10 5 0 C=200pF R=0 ESD DISPERSION MAP C=100pF R=1.5k www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/3 2010.02 - Rev.E Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. 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