RB095T-60_10

Schottky barrier diode RB095T-60 Applications Switching power supply Dimensions (Unit : mm) Structure Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability 6 (1) (2) (3) Construction Silicon epitaxial planer Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage(DC) Average rectified forward current (*1) Fprward current surge peak (60Hz / 1cyc) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 60 60 6 100 150 -40 to +150 Unit V V A A C C (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=130C Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR jc Min. - Typ. - Max. 0.58 300 3.0 Unit V A C/W Conditions IF=3A VR=60V junction to case www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.02 - Rev.D RB095T-60 Electrical characteristic curves 10 Ta=150°C REVERSE CURRENT:IR(uA) FORWARD CURRENT:I F(A) Ta=125 C 1 Ta=75C Ta=25°C Ta=-25°C 1000000 100000 10000 1000 100 10 1 0.1 0.01 0 100 200 300 400 500 600 700 800 0 10 20 　 Data Sheet Ta=150°C Ta=125°C Ta=75C CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 f=1MHz 100 Ta=25C 0.1 10 Ta=-25C 0.01 FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS 30 40 50 60 1 0 5 10 15 20 25 30 REVERSE VOLTAGE : V R(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE : V R(V) VR-IR CHARACTERISTICS 550 200 Ta=25C IF=3A n=30pcs 180 REVERSE CURRENT:IR(uA) 160 140 120 100 80 60 40 20 AVE:20.8uA Ta=25C VR=60V n=30pcs 800 750 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 700 650 600 550 500 450 400 350 300 AVE:514.4p Ta=25C f=1MHz VR=0V n=10pcs FORWARD VOLTAGE : V F(mV) 540 530 AVE:532.4mV 520 510 500 0 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 300 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:I FSM(A) 250 200 150 AVE:73.0A 100 50 0 Ifsm 1cyc 8.3ms 30 25 20 15 10 5 0 trr DISPERSION MAP AVE:8.30ns Ta=25C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 1000 Ifsm 8.3ms 8.3ms PEAK SURGE FORWARD CURRENT:I FSM(A) 1cyc 100 10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISPERSION MAP 1000 Ifsm PEAK SURGE FORWARD CURRENT:I FSM(A) t 100 IM=100mA 10 IF=3A TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1ms time 300us Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) D=1/2 5 Sin(θ=180) DC 10 100 1 Rth(j-c) 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0 0.01 0.1 1 10 100 1000 0 2 4 6 8 10 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/3 2010.02 - Rev.D RB095T-60 　 15 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) DC 10 D=1/2 Io D=t/T VR=30V Tj=150℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) t T VR 10 DC D=1/2 Data Sheet 15 15 0A 0V t T Io VR D=t/T VR=30V Tj=150℃ REVERSE POWER DISSIPATION:PR (W) 10 Sin(θ=180) D=1/2 5 DC 5 5 Sin(θ =180) Sin(θ =180) 0 0 10 20 30 40 50 REVERSE VOLTAGE:V R(V) VR-PR CHARACTERISTICS 60 0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta(℃) Derating Curve"(Io-Ta) 150 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curve"(Io-Tc) 30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k AVE:12.7kV ESD DISPERSION MAP www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/3 2010.02 - Rev.D Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. 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