RB160A40

RB160A40 Diodes Schottky barrier diode RB160A40 Applications General rectification Dimensions (Unit : mm) CATHODE　BAND Features 1) Cylindrical mold type. (MSR) 2) High I surge capability. 3) Low IR. 4) High ESD. φ0.6±0.1 ① ② 2 29±1 3.0±0.2 29±1 φ2.5±0.2 ROHM : MSR ① ② Manufacture Date Construction Silicon epitaxial planar Taping specifications (Unit : mm) BROWN H2 BLUE A E Symbol Standard dimension value(mm) B C L1 H1 F L2 D T-31 　 52.4±1.5 Ａ +0.4 T-32 26.0 0 T-31 　 5.0±0.5 B T-31 5.0±0.3 T-31 C 1.0 max. T-32 T-31 D 0 T-32 T-31 1/2A±1.2 E T-32 1/2A±0.4 T-31 ±0.7 Ｆ T-32 0.2 max. T-31 H1 6.0±0.5 T-32 T-31 H2 5.0±0.5 T-32 T-31 1.5 max. |L1-L2| T-32 0.4 max. ＊H1(6mm)：BROWN Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak （t=100µs） Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 40 40 1 50 150 -55 to +150 Unit V V A A ℃ ℃ (*1) Mounted on epoxy board. 180°Half sine wave Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current ESD break down voltage Symbol VF IR ESD Min. 0.36 20 Typ. 0.46 4.00 Max. 0.51 30 Unit V µA kV Conditions IF=1.0A VR=40V C=100pF,R=1.5kΩ, forward and reverse : 1 time Rev.B 1/3 RB160A40 Diodes Electrical characteristic curves (Ta=25°C) 1000 Ta=75℃ FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) Ta=125℃ 100 Ta=150℃ Ta=25℃ 10 Ta=-25℃ 10000 1000 100 10 1 0.1 0.01 0 5 10 15 20 25 30 35 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 40 Ta=150℃ Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 f=1MHz Ta=75℃ Ta=25℃ Ta=-25℃ 100 10 1 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 480 FORWARD VOLTAGE:VF(mV) Ta=25℃ IF=1A n=30pcs 30 25 20 15 10 5 0 VF DISPERSION MAP IR DISPERSION MAP AVE:4.08uA Ta=25℃ VR=40V n=30pcs 300 290 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 280 270 260 250 240 230 220 210 200 AVE:279.7pF Ta=25℃ f=1MHz VR=0V n=10pcs 460 450 AVE:454.3mV 440 430 REVERSE CURRENT:IR(uA) 470 Ct DISPERSION MAP 200 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 150 8.3ms 100 1cyc RESERVE RECOVERY TIME:trr(ns) 30 PEAK SURGE FORWARD CURRENT:IFSM(A) 25 20 15 10 5 0 IFSM DISRESION MAP trr DISPERSION MAP AVE:10.4ns Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 100 80 60 40 Ifsm 20 8.3ms 8.3ms 1cyc 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 50 AVE:83.0A 0 Mounted on epoxy board 200 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 150 t 1000 1 Rth(j-a) Rth(j-l) 0.9 0.8 FORWARD POWER DISSIPATION:Pf(W) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Sin(θ＝180) DC D=1/2 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) IF=0.5A IM=1mA 100 time(s) td=300us 100 Rth(j-c) 10 50 0 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 1 0.001 0.01 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1 10 100 1000 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 Rev.B 2/3 RB160A40 Diodes 0.05 3 3 0A 0V DC D=1/2 Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) t T VR D=t/T VR=20V Tj=150℃ 2.5 2 1.5 D=1/2 1 0.5 0 0 25 50 75 100 125 150 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.04 REVERSE POWER DISSIPATION:PR (W) 2.5 0A 0V t DC T Io VR D=t/T VR=20V Tj=150℃ 2 0.03 DC 0.02 D=1/2 Sin(θ＝180) 1.5 1 0.01 0.5 Sin(θ＝180) Sin(θ＝180) 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 40 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 5 AVE:7.30kV 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1