RB160A60
Diodes
Schottky barrier diode
RB160A60
Applications General rectification Dimensions (Unit : mm)
CATHODE BAND φ0.6±0.1
① ② 3
Features 1) Cylindrical mold type. (MSR) 2) High I surge capability. 3) Low VF. 4) High ESD.
29±1
3.0±0.2
29±1 φ2.5±0.2
ROHM : MSR ① ② Manufacture Date
Construction Silicon epitaxial planar
Taping specifications (Unit : mm)
BROWN H2 A BLUE E
Symbol A Standard dimension value(mm)
B
C
L1 H1 F
L2 D
T-31 52.4±1.5 +0.4 T-32 26.0 0 T-31 5.0±0.5 B T-31 5.0±0.3 T-31 C 1.0 max. T-32 T-31 D 0 T-32 T-31 1/2A±1.2 E T-32 1/2A±0.4 T-31 ±0.7 F T-32 0.2 max. T-31 H1 6.0±0.5 T-32 T-31 H2 5.0±0.5 T-32 T-31 1.5 max. |L1-L2| T-32 0.4 max. *H1(6mm):BROWN
Absolute maximum ratings (Ta=25°C)
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (t=100µs) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 60 60 1 60 150 -55 to +150 Unit V V A A ℃ ℃
(*1) Mounted on epoxy board. 180°Half sine wave
Electrical characteristic (Ta=25°C)
Parameter Forward voltage Reverse current ESD break down voltage Symbol VF IR ESD Min. 0.4 20 Typ. 0.5 7.00 Max. 0.55 50 Unit V µA kV Conditions IF=1.0A VR=60V C=100pF,R=1.5kΩ, forward and reverse : 1 times
Rev.B
1/3
RB160A60
Diodes
Electrical characteristic curves
1 Ta=75℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=125℃ 0.1 Ta=25℃ Ta=-25℃ 10000 1000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75℃ 100 10 1 0.1 0.01 0 200 400 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 600 0 10 20 30 40 50 60 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS Ta=25℃ 100 Ta=125℃ 1000 f=1MHz
0.01
Ta=-25℃
10
0.001
1 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30
530 FORWARD VOLTAGE:VF(mV) Ta=25℃ IF=1A n=30pcs
100 90 REVERSE CURRENT:IR(uA) 80 70 60 50 40 30 20 10 0 VF DISPERSION MAP IR DISPERSION MAP AVE:6.966uA Ta=25℃ VR=20V n=30pcs
100 90 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 80 70 60 50 40 30 20 10 0 Ct DISPERSION MAP AVE:37.9pF Ta=25℃ f=1MHz VR=10V n=10pcs
520
510
500
490 AVE:495.1mV 480
150 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 100 1cyc 8.3ms
30 PEAK SURGE FORWARD CURRENT:IFSM(A) 25 20 15 10 5 0 IFSM DISRESION MAP trr DISPERSION MAP Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs
100 Ifsm 8.3ms 8.3ms 1cyc 50
50
AVE:85.0A
AVE:11.7ns
0
0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
Mounted on epoxy board
200 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 150 t TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W)
1000
1.5 Rth(j-a) Rth(j-l) FORWARD POWER DISSIPATION:Pf(W)
IF=0.5A
IM=1mA
100
time(s) td=300us
1 Sin(θ=180) 0.5
D=1/2 DC
100
Rth(j-c)
10
50
0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
1 0.001
0
0.01
TIME:t(s) Rth-t CHARACTERISTICS
0.1
1
10
100
1000
0
0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS
2
Rev.B
2/3
RB160A60
Diodes
0.2 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 3 2.5 2 T 1.5 D=1/2 1 0.5 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curve゙(Io-Ta) 125 Sin(θ=180) DC 0A 0V t Io VR D=t/T VR=30V Tj=125℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
3
2.5
REVERSE POWER DISSIPATION:PR (W)
0.15 D=1/2 0.1 DC
0A 0V t DC
Io VR D=t/T VR=30V Tj=125℃
2
T
1.5
D=1/2
1
0.05
0.5
Sin(θ=180)
0 0 10
Sin(θ=180) 20 30 40 50 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 60
0 0 25 50 75 100 125
CASE TEMPARATURE:Tc(℃) Derating Curve゙(Io-Tc)
30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ
AVE:6.90kV
ESD DISPERSION MAP
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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