RB160L-40_11

Data Sheet Schottky barrier diode RB160L-40 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 2.0 Features 1) Small power mold type. (PMDS) 2) Low IR. 3) High reliability Construction Silicon epitaxial planer 2.6±0.2 2.0 ① ② 0.1±0.02 　　　 0.1 5.0±0.3 3 4 4.5±0.2 1.2±0.3 PMDS 1.5±0.2 2.0±0.2 Structure ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture Date Taping specifications (Unit : mm) 2.0±0.05 4.0±0.1 φ1.55±0.05 1.75±0.1 0.3 5.5±0.05 φ1.55 2.9±0.1 4.0±0.1 2.8MAX Reverse voltage (repetitive peak) Reverse voltage (DC) Symbol VRM VR Average rectified forward current Io IFSM Forward current surge peak (60Hz / 1cyc) Junction temperature Tj Storage temperature Tstg (*1)Tc=90°C max Mounted on epoxy board. 180° Half sine wave Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Absolute maximum ratings (Ta=25°C) Parameter Limits 40 40 1 70 150 40 to 150 Unit V V A A C C 5.3±0.1 　 0.05 9.5±0.1 12±0.2 Symbol VF IR1 IR2 Min. - Typ. - Max. 0.55 10 100 Unit V A A Conditions IF=1.0A VR=6V VR=40V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.B 4.2 RB160L-40 Electrical characteristic curves 　 Data Sheet 1 100000 Ta=75℃ Ta=125℃ 10000 Ta=150℃ 1000 f=1MHz Ta=125℃ Ta=75℃ Ta=25℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=150℃ 0.1 Ta=25℃ Ta=-25℃ 0.01 1000 100 10 1 0.1 0.01 Ta=-25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 10 0.001 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 600 1 0 10 20 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 40 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 510 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) 500 490 480 470 AVE:489.6mV 460 VF DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=1A n=30pcs 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 250 Ta=25℃ VR=40V n=30pcs 240 230 220 210 200 190 180 170 160 150 IR DISPERSION MAP Ct DISPERSION MAP AVE:192.7pF Ta=25℃ f=1MHz VR=0V n=10pcs AVE:2.207uA 200 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 1cyc 8.3ms 20 200 PEAK SURGE FORWARD CURRENT:IFSM(A) 150 15 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 150 8.3ms 8.3ms 1cyc 100 10 100 50 AVE:125.6A 5 AVE:8.667ns 0 50 0 IFSM DISRESION MAP 0 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 300 1000 2 Mounted on epoxy board PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 0 1 Ifsm t TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) FORWARD POWER DISSIPATION:Pf(W) 100 Rth(j-a) 1.5 D=1/2 Sin(θ＝180) 1 DC 10 IM=10mA Rth(j-c) IF=0.5A 1 1ms time 300us 0.5 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.01 0 1000 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 0.1 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.B RB160L-40 　 Data Sheet 1 0.8 3 2.5 2 1.5 1 0.5 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) Sin(θ＝180) DC D=1/2 0A 0V Io 3 2.5 2 1.5 1 0.5 Sin(θ＝180) 0 0 25 50 75 100 125 150 CASE TEMPARATURE:0T(℃) Derating Curveﾞ(Io-Tc) DC D=1/2 0A 0V Io t T VR D=t/T VR=20V Tj=150 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) t T 0.6 DC 0.4 0.2 0 0 10 20 D=1/2 Sin(θ＝180) 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 5 0 C=200pF R=0Ω No break at 30kV AVE:8.70kV C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR D=t/T VR=20V Tj=150 2011.04 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A