RB160L-60
Diodes
Schottky barrier diode
RB160L-60
Applications General rectification External dimensions (Unit : mm) Land size figure (Unit : mm)
2.0
2.6 ±0.2
Features 1) Small power mold type. (PMDS) 2) Low IR. 3) High reliability.
2.0
4.5±0.2
1.2±0.3
4 ①
4 ②
0.1±0 .0 2 0 .1
5.0±0 .3
P M DS
1.5±0 .2 2.0±0.2
Structure
Construction Silicon epitaxial planar
ROHM : PMDS JEDEC : S OD-106 ① ② Manu facture Date
Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05 φ1 .55±0.05 1.75±0.1 0.3
5.5±0.05
φ1 .5 5 2.9±0.1 4.0±0.1 2.8MAX
Absolute maximum ratings (Ta=25°C)
Pa ra m e te r R e ve rs e vo l ta ge (repeti ti ve peak ) R e ve rs e vo l ta ge (D C ) Average re c ti fi ed fo rw ard c u rrent Fo rw ard c u rre nt s u rge peak ( 60H z・ 1c yc ) J unc ti on te m p erature S torage te m p erature Sym b o l VRM VR Io IFSM Tj Ts tg Li m i ts 60 60 1 30 125 -40 to + 125 U n it V V A A ℃ ℃
(* 1) Mounted o n epoxy b oard. 1 80 ° Hal f s i ne w a ve
Electrical characteristics (Ta=25°C)
Pa ra m e te r Fo rw a rd vo l tage R e ve rs e cu rre n t S ym bol VF IR Mi n. Typ . Ma x. 0.58 1 U n it V mA IF=1 .0 A VR =6 0 V C o ndi ti o n s
5.3 ±0.1 0 .0 5 9.5±0.1
12±0.2
4.2
Rev.B
1/3
RB160L-60
Diodes
Electrical characteristic curves (Ta=25°C)
1000 Ta=75℃ 10000 1000 Ta=125℃ Ta=75℃ 100 10 1 Ta=-25℃ 0.1 0.01 0.001 0 200 400 600 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 0 10 20 30 40 50 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 60 1 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 Ta=25℃ 1000 f=1MHz
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
Ta=125℃ 100
Ta=25℃
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
100
Ta=-25℃ 10
10
1
550
30 Ta=25℃ IF=1A n=30pcs 25 20 15 10 5 0 VF DISPERSION MAP Ta=25℃ VR=60V n=30pcs
200 Ta=25℃ f=1MHz VR=0V n=10pcs
FORWARD VOLTAGE:VF(mV)
530 520 510 500
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
540
REVERSE CURRENT:IR(uA)
190
180
170
AVE:3.724uA
AVE:529.4mV
160 AVE:192.4pF 150
IR DISPERSION MAP
Ct DISPERSION MAP
200
30
200
PEAK SURGE FORWARD CURRENT:IFSM(A)
150
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm 8.3ms
RESERVE RECOVERY TIME:trr(ns)
1cyc
25 20 15 10 AVE:11.7ns 5 0
Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs
Ifsm 150 8.3ms 8.3ms 1cyc 100
100
50
AVE:126.0A
50
0
0 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 0
IFSM DISRESION MAP
200
1000
2
Mounted on epoxy board
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm 150 t
TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W)
Rth(j-a)
FORWARD POWER DISSIPATION:Pf(W)
100
1.5 D=1/2 1 Sin(θ=180) DC
100
10
IM=10mA
Rth(j-c)
IF=0.5A
50
1
1ms time 300us
0.5
0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 10 0
0.1 0.001
0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0 .5 1 1 .5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 2
Rev.B
2/3
RB160L-60
Diodes
0.03 3 2.5
AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W)
3 0A 0V DC t T D=1/2 Io
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0.02
2
VR D=t/T VR=30V Tj=125℃
2.5 DC 2 1.5 1 0.5 0 Sin(θ=180)
0A 0V t
Io VR D=t/T VR=30V T Tj=125℃
1.5 1
Sin(θ=180) 0.01 DC D=1/2
D=1/2
0.5 0
Sin(θ=180)
0 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 20
0
25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curve゙(Io-Ta)
125
0
25
50
75
100
125
CASE TEMPARATURE:Tc(℃) Derating Curve゙(Io-Tc)
30
ELECTROSTATIC DISCHARGE TEST ESD(KV)
No break at 30kV 25 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ
AVE:8.70kV
ESD DISPERSION MAP
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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