RB160L-60_09

Schottky barrier diode RB160L-60 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 2.0 2.6±0.2 3) High reliability ① ② 0.1±0.02 　　　 0.1 5.0±0.3 4 4 4.5±0.2 Features 1) Small power mold type. (PMDS) 2) Low IR. 2.0 1.2±0.3 PMDS 1.5±0.2 2.0±0.2 Structure Construction Silicon epitaxial planar ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture Date Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75± 0.1 0.3 5.5±0.05 φ1.55 2.9±0.1 4.0±0.1 2.8MAX Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz/1cyc) Junction temperature Storage temperature VRM VR Io IFSM Tj Tstg Limits 60 60 1 30 125 -40 to +125 Unit V V A A °C °C (*1) Mounted on epoxy board. 180°Half sine wave Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF IR Min. - Typ. - Max. 0.58 1 Unit V mA IF=1.0A VR=60V www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 1/3 5.3±0.1 　 0.05 9.5±0.1 Conditions 2009.12 - Rev.C 12± 0.2 4.2 RB160L-60 Electrical characteristics curves 1000 Ta=75°C FORWARD CURRENT : IF(mA) REVERSE CURRENT : IR(uA) Ta=125°C 100 Ta=25°C 10000 1000 100 10 1 0.1 0.01 0.001 0 200 400 600 0 10   Data Sheet Ta=125°C Ta=75°C 1000 f=1MH CAPACITANCE BETWEEN TERMINALS:Ct(pF) 60 100 Ta=-25°C 10 Ta=25°C Ta=-25°C 10 1 1 20 30 40 50 0 5 10 15 20 25 30 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 550 FORWARD VOLTAGE : VF(mV) 30 25 20 15 10 AVE:3.724 5 0 Ta=25°C VR=60V n=30pcs CAPACITANCE BETWEEN TERMINALS : Ct(pF) Ta=25°C IF=1A n=30pcs 200 Ta=25°C f=1MHz VR=0V n=10pcs REVERSE CURRENT : IR(uA) 540 190 530 180 520 170 510 AVE:529.4 500 160 AVE:192.4pF 150 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 200 RESERVE RECOVERY TIME : trr(ns) PEAK SURGE FORWARD CURRENT : IFSM(A) 30 25 20 15 10 AVE:11.7ns 5 0 Ifsm 150 1cyc 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 200 Ifsm 150 8.3ms 8.3ms 1cyc 100 100 50 AVE:126.0A 50 0 0 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISRESION MAP 200 1000 TRANSIENT THAERMAL IMPEDANCE : Rth (°C/W) PEAK SURGE FORWARD CURRENT : IFSM(A) Ifsm 150 t Mounted on epoxy board Rth(j-a) FORWARD POWER DISSIPATION : Pf(W) 100 1.5 D=1/2 1 Sin(θ=180) DC 0.5 2 100 10 IM=10mA Rth(j-c) IF=0.5A 50 1 1ms tim 0 300us 0.1 0 0.5 1 1.5 2 0 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100 0.001 0.1 10 1000 TIME : t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.12 - Rev.C RB160L-60   3 0A AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 2.5 2 1.5 D=1/2 1 0.5 Sin(θ=180) 0 DC 0V t T Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR D=t/T VR=30V Tj=125°C 2.5 2 1.5 D=1/2 1 0.5 Sin(θ=180) 0 0 25 50 75 100 125 0 25 50 75 DC 3 0A 0V t Data Sheet 0.03 Io VR D=t/T VR=30V Tj=125°C REVERSE POWER DISSIPATION:PR (W) 0.02 T Sin(θ=180) 0.01 DC D=1/2 0 0 5 10 15 20 100 125 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE:Ta(°C) Derating Curve"(Io-Ta) CASE TEMPARATURE:Tc(°C) Derating Curve"(Io-Tc) 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) No break at 30kV 25 20 15 10 5 AVE:8.70kV 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.12 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. 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