RB160L-60_11

Data Sheet Schottky barrier diode RB160L-60 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 2.0 2.6±0.2 3) High reliability ① ② 0.1±0.02 　　　 0.1 5.0±0.3 4 4 4.5±0.2 Features 1) Small power mold type. (PMDS) 2) Low IR. 2.0 1.2±0.3 PMDS 1.5±0.2 2.0±0.2 Structure Construction Silicon epitaxial planar ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture Date Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 4.2 0.3 5.5±0.05 φ1.55 2.9±0.1 4.0±0.1 2.8MAX Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz/1cyc) Junction temperature Storage temperature VRM VR Io IFSM Tj Tstg Limits 60 60 1 30 150 40 to 125 Unit V V A A C C (*1) Mounted on epoxy board. 180°Half sine wave Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF IR Min. - Typ. - Max. 0.58 1 Unit V mA IF=1.0A VR=60V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 5.3±0.1 　 0.05 9.5±0.1 Conditions 2011.04 - Rev.D 12±0.2 RB160L-60 Electrical characteristics curves 　 Data Sheet 1000 10000 Ta=75C 1000 Ta=125C Ta=75C 1000 f=1MH FORWARD CURRENT : I F(mA) REVERSE CURRENT : IR(uA) 100 Ta=125C Ta=25C 100 10 1 0.1 0.01 0.001 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 60 100 Ta=-25C 10 Ta=25C Ta=-25C 10 1 0 200 400 600 1 0 10 20 30 40 50 0 5 10 15 20 25 30 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 550 30 200 Ta=25C VR=60V n=30pcs Ta=25C f=1MHz VR=0V n=10pcs FORWARD VOLTAGE : V F(mV) REVERSE CURRENT : IR(uA) 20 15 10 AVE:3.724 5 0 CAPACITANCE BETWEEN TERMINALS : Ct(pF) 540 Ta=25C IF=1A n=30pcs 25 190 530 180 520 170 510 AVE:529.4 500 160 AVE:192.4pF 150 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 200 30 200 PEAK SURGE FORWARD CURRENT:I FSM(A) Ta=25C IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm REVERSE RECOVERY TIME : trr(ns) PEAK SURGE FORWARD CURRENT : I FSM(A) 150 Ifsm 1cyc 8.3ms 25 20 15 10 AVE:11.7ns 5 0 150 8.3ms 8.3ms 1cyc 100 100 50 AVE:126.0A 50 0 0 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISRESION MAP 200 1000 2 Mounted on epoxy board 100 Rth(j-a) Ifsm 150 t TRANSIENT THAERMAL IMPEDANCE : Rth (C/W) PEAK SURGE FORWARD CURRENT : I FSM(A) FORWARD POWER DISSIPATION : Pf(W) 1.5 D=1/2 1 Sin(=180) DC 0.5 100 10 IM=10mA Rth(j-c) IF=0.5A 50 1 1ms tim 300us 0.1 0.001 0 0.1 10 1000 0 0.5 1 1.5 2 0 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100 TIME : t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.D RB160L-60 　 Data Sheet 0.03 3 2.5 2 1.5 1 0.5 Sin(=180) 0 0 5 10 15 20 0 25 50 75 100 125 DC 0A 0V t T D=1/2 Io 3 2.5 2 1.5 D=1/2 1 0.5 Sin(=180) 0 0 25 50 75 100 125 DC 0A 0V t T Io VR D=t/T VR=30V Tj=125C AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 0.02 D=t/T VR=30V Tj=125C Sin(=180) 0.01 DC D=1/2 0 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE:Ta(C) Derating Curve"(Io-Ta) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR CASE TEMPARATURE:Tc(C) Derating Curve"(Io-Tc) 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) No break at 30kV 25 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k AVE:8.70kV ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.D Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A