RB160L-90

Data Sheet Schottky Barrier Diode RB160L-90  Applications General rectification  Dimensions (Unit : mm)  Land size figure (Unit : mm) 2.0 2.6±0.2 3)High reliability ① ② 0.1±0.02 　　　 0.1 5.0±0.3 4 6 4.5±0.2  Features 1)Small power mold type.（PMDS） 2) Low IR. 2.0 1.2±0.3 PMDS  Construction Silicon epitaxial planer 1.5±0.2 2.0±0.2  Structure ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture Date  Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.3 5.5±0.05 1.75±0.1 φ1.55 2.9±0.1 4.0±0.1 2.8MAX  Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 95 90 1 30 150 40 to 150 Unit V V A A C C (*1)Mounting on epoxy board. 180°Half sine wave  Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current 5.3±0.1 　 0.05 9.5±0.1 Symbol VF IR Min. - Typ. - Max. 0.73 100 Unit V μA Conditions IF=1.0A VR=90V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 12±0.2 2011.04 - Rev.A 4.2 RB160L-90 Data Sheet Ta=150℃ 1 Ta=75℃ 10000 Ta=125℃ 1000 f=1MHz Ta=75℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=125℃ 0.1 Ta=150℃ Ta=25℃ 100 10 1 0.1 0.01 Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 100 Ta=-25℃ 0.01 Ta=-25℃ 10 0.001 0 100 200 300 400 500 600 700 1 0 10 20 30 40 50 60 70 80 90 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 650 100 200 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 640 Ta=25℃ IF=1A n=30pcs 90 80 70 60 50 40 30 20 10 0 AVE:478.3nA σ:36.1612nA Ta=25℃ Ta=25℃ VR=90V VR=100V n=30pcs n=30pcs 190 180 170 160 150 140 130 120 110 100 Ta=25℃ f=1MHz VR=0V n=10pcs 630 AVE:632.1mV 620 AVE:149.6pF 610 AVE:4.655uA 600 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 200 30 100 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 150 8.3ms 100 25 20 15 10 5 0 PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs AVE:7.40ns Ifsm 8.3ms 8.3ms 1cyc 50 AVE:56.0A 50 0 IFSM DISRESION MAP 0 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 150 1000 2 IM=10mA IF=0.5A TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 100 Rth(j-a) 300us t FORWARD POWER DISSIPATION:Pf(W) 100 1ms time D=1/2 1 Sin(θ＝180) DC 10 Rth(j-c) 50 1 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0 0.01 0.1 1 10 100 1000 0 TIME:t(s) Rth-t CHARACTERISTICS 1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.A RB160L-90 Data Sheet 1 3 2.5 0A 0V DC Io t T 3 VR D=t/T VR=45V Tj=150℃ 2.5 2 1.5 1 Sin(θ＝180) 0.5 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 0A 0V t T DC D=1/2 Io VR D=t/T VR=45V Tj=150℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.6 DC 0.4 Sin(θ＝180) 0.2 D=1/2 2 1.5 D=1/2 1 Sin(θ＝180) 0.5 0 0 0 10 20 30 40 50 60 70 80 REVERSE VOLTAGE:VR(V) VR-PR C HARACTERISTICS 90 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.8 REVERSE POWER DISSIPATION:PR (W) 150 30 25 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ AVE:1.70kV AVE:10.7kV ELECTROSTATIC DISCHARGE TEST ESD(KV) ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A