Data Sheet
Schottky Barrier Diode
RB160L-90
Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 2.0
2.6±0.2
3)High reliability
①
②
0.1±0.02 0.1
5.0±0.3
4
6
4.5±0.2
Features 1)Small power mold type.(PMDS) 2) Low IR.
2.0
1.2±0.3
PMDS
Construction Silicon epitaxial planer
1.5±0.2
2.0±0.2
Structure
ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture Date
Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05 φ1.55±0.05 0.3
5.5±0.05
1.75±0.1
φ1.55 2.9±0.1 4.0±0.1 2.8MAX
Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature
Symbol VRM VR Io IFSM Tj Tstg
Limits 95 90 1 30 150 40 to 150
Unit V V A A C C
(*1)Mounting on epoxy board. 180°Half sine wave
Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current
5.3±0.1 0.05 9.5±0.1
Symbol VF IR
Min. -
Typ. -
Max. 0.73 100
Unit V μA
Conditions IF=1.0A VR=90V
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1/3
12±0.2
2011.04 - Rev.A
4.2
RB160L-90
Data Sheet
Ta=150℃ 1 Ta=75℃ 10000
Ta=125℃
1000
f=1MHz Ta=75℃
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(A)
Ta=125℃ 0.1 Ta=150℃
Ta=25℃
100 10 1 0.1 0.01 Ta=25℃
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
1000
100
Ta=-25℃ 0.01
Ta=-25℃
10
0.001 0 100 200 300 400 500 600 700
1
0 10 20 30 40 50 60 70 80 90
0
FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS
REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS
5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
30
650
100
200
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(uA)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
640
Ta=25℃ IF=1A n=30pcs
90 80 70 60 50 40 30 20 10 0
AVE:478.3nA σ:36.1612nA
Ta=25℃ Ta=25℃ VR=90V VR=100V n=30pcs n=30pcs
190 180 170 160 150 140 130 120 110 100
Ta=25℃ f=1MHz VR=0V n=10pcs
630 AVE:632.1mV 620
AVE:149.6pF
610
AVE:4.655uA
600 VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
200
30
100
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm 150 8.3ms 100
25 20 15 10 5 0
PEAK SURGE FORWARD CURRENT:IFSM(A)
1cyc
Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs AVE:7.40ns
Ifsm 8.3ms 8.3ms 1cyc 50
AVE:56.0A
50
0 IFSM DISRESION MAP
0 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
150
1000
2
IM=10mA IF=0.5A
TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W)
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm 100
Rth(j-a)
300us
t
FORWARD POWER DISSIPATION:Pf(W)
100
1ms
time
D=1/2 1 Sin(θ=180)
DC
10
Rth(j-c)
50
1
0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
0.1 0.001
0 0.01 0.1 1 10 100 1000 0 TIME:t(s) Rth-t CHARACTERISTICS 1 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 2
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2/3
2011.04 - Rev.A
RB160L-90
Data Sheet
1
3 2.5 0A 0V DC Io t T
3 VR D=t/T VR=45V Tj=150℃ 2.5 2 1.5 1 Sin(θ=180) 0.5 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curve゙(Io-Ta) 150 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curve゙(Io-Tc) 0A 0V t T DC D=1/2
Io VR D=t/T VR=45V Tj=150℃
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0.6 DC 0.4 Sin(θ=180) 0.2
D=1/2
2 1.5
D=1/2 1 Sin(θ=180) 0.5 0
0 0 10 20 30 40 50 60 70 80 REVERSE VOLTAGE:VR(V) VR-PR C HARACTERISTICS 90
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0.8
REVERSE POWER DISSIPATION:PR (W)
150
30 25 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ AVE:1.70kV AVE:10.7kV
ELECTROSTATIC DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
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3/3
2011.04 - Rev.A
Notice
Notes
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http://www.rohm.com/contact/
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R1120A
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