RB160L

RB160L-40 Diodes Schottky barrier diode RB160L–40 Applications High frequency rectification For switching power supply. External dimensions (Units : mm) 1.5±0.2 CATHODE MARK 1.2±0.3 4.5±0.2 Features 1) Compact power mold type (PMDS) 2) Low IR. (IR=5mA Typ.) 3) High reliability 3 4 0.1 +0.02 −0.1 2.6±0.2 2.0±0.2 Construction Silicon epitaxial Planar ROHM : PMDS EIAJ : − JEDEC : SOD-106 , ···· Date of manufacture EX. 1999. 12 →9, C Absolute maximum ratings (Ta = 25°C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current ∗ Peak forward surge current Junction temperature Storage temperature ∗When mounted on a PCBs board Symbol VRM VR IO IFSM Tj Tstg Limits 40 40 1 70 125 −40~+125 Unit V V A A °C °C Electrical characteristics (Ta = 25°C) Parameter Forward voltage Reverse current Symbol VF IR Min. − − Typ. − − Max. 0.55 0.1 Unit V mA IF = 1.0A VR = 40V Conditions 5.0±0.3 RB160L-40 Diodes Electrical characteristic curves (Ta = 25°C) CAPACITANCE BETWEEN TERMINALS : CT (F) 10 10m 125°C 10n f = 1MHz FORWARD CURRENT : IF (A) REVERSE CURRENT : IR (A) 1m 1 100°C 75°C 50°C 100µ 1n 100m 10µ 25°C 10m 125 °C 75°C 25 ° C 100p 1µ 1m 0 0.2 0.4 0.6 0.8 1.0 100n 0 10 20 30 40 50 60 10p 0 5 10 15 20 25 30 35 FORWARD VOLTAGE : VF(V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics Fig. 2 Reverse characteristics Fig. 3 Capacitance between terminals characteristics 1.2 FORWARD POWER DISSIPATION : PF (W) 2 POWER DISSIPATION : Pd (W) 1.0 sin 0.5 0.8 0.6 D = 0.05 0.4 0.1 0.3 0.2 0.8 DC REVERSE RECOVERY TIME : trr (ns) 20 1 IF IO Tp 0.2 T 0 0 0.4 0.8 1.2 1.6 d= Tp T 2.4 10 2.0 0 50 100 150 0 5 10 15 20 AVERAGE RECTIFIED FORWARD CURRENT : IO (A) AMBIENT TEMPERATURE : Ta (°C) FORWARD CURRENT : IF (mA) Fig. 4 Forward power dissipation characteristics Fig. 5 Derating curve Fig. 6 Reverse recovery time characteristics