RB160M-30

RB160M-30 Diodes Schottky barrier diode RB160M-30 Applications General rectification Dimensions (Unit : mm) 1.6±0.1 0.1±0.1 　　　 0.05 Land size figure (Unit : mm) 1.2 0.85 2.6±0.1 3.5±0.2 Features 1) Small power mold type. (PMDU) 2) Low IR. 3) High reliability. PMDU Structure Construction Silicon epitaxial planar 0.9±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date 0.8±0.1 Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.25±0.05 3.5±0.05 8.0±0.2 1.81±0.1 4.0±0.1 φ1.0±0.1 3.71±0.1 1.5MAX Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 30 30 1 30 125 -40 to +125 Unit V V A A ℃ ℃ (*1)Mounted on epoxy board. 180°Half sine wave Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF1 VF2 IR1 IR2 Min. - Typ. 0.39 0.43 3.0 9.0 Max. 0.46 0.48 20 50 Unit V V µA µA Conditions IF=0.5A IF=1.0A VR=15V VR=30V Rev.C 3.05 ① 1/3 RB160M-30 Diodes Electrical characteristic curves (Ta=25°C) 1 Ta=75℃ REVERSE CURRENT:IR(uA) 10000 1000 Ta=75℃ 100 10 1 0.1 0.01 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 600 0 5 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS Ta=25℃ Ta=125℃ 1000 f=1MHz FORWARD CURRENT:IF(A) Ta=125℃ 0.1 Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 Ta=-25℃ 0.01 Ta=-25℃ 10 0.001 1 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 450 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) 440 430 420 AVE:424.2mV 410 400 VF DISPERSION MAP Ta=25℃ IF=1A n=30pcs 100 90 80 70 60 50 40 30 20 10 0 AVE:8.172uA Ta=25℃ VR=30V n=30pcs 400 390 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 380 370 360 350 340 330 320 310 300 AVE:324.4pF Ta=25℃ f=1MHz VR=0V n=10pcs IR DISPERSION MAP Ct DISPERSION MAP 150 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 100 AVE:98.0A 50 1cyc RESERVE RECOVERY TIME:trr(ns) 20 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 100 PEAK SURGE FORWARD CURRENT:IFSM(A) 15 10 AVE:11.7ns 5 50 Ifsm 8.3ms 8.3ms 1cyc 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 IFSM DISRESION MAP 0 trr DISPERSION MAP 150 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm t 100 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Mounted on epoxy board IM=10mA IF=0.5A 1 Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) 0.8 0.6 0.4 0.2 0 Sin(θ＝180) D=1/2 DC 100 1ms time 300us 10 Rth(j-c) 50 1 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0.01 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1 10 100 1000 0 0.5 1 1.5 2 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS Rev.C 2/3 RB160M-30 Diodes 0.1 0.08 REVERSE POWER DISSIPATION:PR (W) 0.06 0.04 0.02 0 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 20 DC Sin(θ＝180) D=1/2 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 2.5 2 1.5 D=1/2 1 0.5 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 Sin(θ＝180) 0A 0V DC Io t T VR D=t/T VR=15V Tj=125℃ 3 2.5 2 1.5 D=1/2 1 0.5 0 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 125 Sin(θ＝180) 0A 0V DC Io t T VR D=t/T VR=15V Tj=125℃ 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ No break at 30kV AVE:6.90kV ESD DISPERSION MAP Rev.C 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1