RB160M-30_11

Data Sheet Schottky barrier diode RB160M-30 Applications General rectification Dimensions (Unit : mm) 1.6±0.1 0.1±0.1 　　　 0.05 Land size figure (Unit : mm) 1.2 2.6±0.1 3) High reliability Construction Silicon epitaxial planer 0.9±0.1 3.5±0.2 Features 1) Small power mold type. (PMDU) 2) Low IR. ① 0.85 PMDU Structure ROHM : PMDU JEDEC :SOD-123 Manufacture Date 0.8±0.1 Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.25±0.05 3.5±0.05 8.0±0.2 1.81±0.1 4.0±0.1 φ1.0±0.1 3.71±0.1 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz / 1cyc) Junction temperature Storage temperature (*1)Mounted on epoxy board. 180° Half sine wave Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Symbol VRM VR Io IFSM Tj Tstg Limits 30 30 1 30 125 40 to 125 Unit V V A A C C Symbol VF1 VF2 IR1 IR2 Min. - Typ. 0.39 0.43 3.0 9.0 Max. 0.46 0.48 20 50 Unit V V A A Conditions IF=0.5A IF=1.0A VR=15V VR=30V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.C 3.05 1.5MAX RB160M-30 Electrical characteristic curves 　 Data Sheet 1 Ta=75℃ 10000 Ta=125℃ 1000 f=1MHz REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=125℃ 0.1 Ta=25℃ Ta=75℃ 100 10 1 0.1 0.01 Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 30 1000 100 Ta=-25℃ 0.01 Ta=-25℃ 10 0.001 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 600 0 5 10 15 20 25 1 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 450 100 400 Ta=25℃ VR=30V n=30pcs 390 Ta=25℃ f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 440 430 420 AVE:424.2mV 410 400 VF DISPERSION MAP Ta=25℃ IF=1A n=30pcs 90 80 70 60 50 40 30 20 10 0 AVE:8.172uA 380 370 360 350 340 330 320 310 300 AVE:324.4pF IR DISPERSION MAP Ct DISPERSION MAP 150 PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 100 AVE:98.0A 50 15 10 AVE:11.7ns 5 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm REVERSE RECOVERY TIME:trr(ns) 1cyc 20 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 100 50 Ifsm 8.3ms 8.3ms 1cyc 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 IFSM DISRESION MAP 0 trr DISPERSION MAP 150 1000 Mounted on epoxy board IM=10mA IF=0.5A 1 Rth(j-a) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm t 100 300us FORWARD POWER DISSIPATION:Pf(W) 100 1ms time 0.8 0.6 0.4 0.2 0 Sin(θ＝180) D=1/2 DC 10 Rth(j-c) 50 1 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0.01 0.1 1 10 100 1000 0 0.5 1 1.5 2 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.C RB160M-30 　 Data Sheet 0.1 0.08 3 3 0A 0V DC D=1/2 Io 2.5 2 1.5 1 0.5 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 125 Sin(θ＝180) 0A 0V DC D=1/2 Io t T VR D=t/T VR=15V Tj=125℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) t T 2 1.5 1 0.5 0 0.06 0.04 0.02 0 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 20 DC Sin(θ＝180) D=1/2 VR D=t/T VR=15V Tj=125℃ Sin(θ＝180) 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 5 0 C=200pF R=0Ω No break at 30kV AVE:6.90kV C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 2.5 2011.04 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A