RB160M-40_1

RB160M-40 Diodes Schottky barrier diode RB160M-40 Applications General rectification Dimensions (Unit : mm) 1.6±0.1 0.1±0.1 　　　 0.05 Land size figure (Unit : mm) 1.2 0.85 2.6±0.1 3.5±0.2 Features 1) Small power mold type. (PMDS) 2) Low IR. 3) High reliability. PMDU Structure Construction Silicon epitaxial planar 0.9±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date 0.8±0.1 Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.25±0.05 3.5±0.05 8.0±0.2 1.81±0.1 4.0±0.1 φ1.0±0.1 3.71±0.1 1.5MAX Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 40 40 1 30 150 -40 to +150 Unit V V A A ℃ ℃ (*1)Mounted on epoxy board. 180°Half sine wave Electrical characteristics (Ta=25°C) Parameter Symbol Forward voltage Reverse current VF IR Min. - Typ. 0.46 4.0 Max. 0.51 30 Unit V µA Conditions IF=1.0A VR=40V Rev.D 3.05 ① 1/3 RB160M-40 Diodes Electrical characteristic curves (Ta=25°C) 1000 Ta=75℃ FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) Ta=125℃ 100 Ta=150℃ Ta=25℃ 10 Ta=-25℃ 10000 Ta=150℃ Ta=125℃ 1000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 100 10 1 0.1 0.01 0 5 10 15 20 25 30 35 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 40 Ta=75℃ Ta=25℃ Ta=-25℃ 100 10 1 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 480 FORWARD VOLTAGE:VF(mV) 470 460 450 AVE:454.3mV 440 430 VF DISPERSION MAP Ta=25℃ VF=1A n=30pcs 30 REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 300 Ta=25℃ VR=40V n=30pcs 290 280 270 260 250 240 230 220 210 200 AVE:279.7pF Ta=25℃ f=1MHz VR=0V n=10pcs 25 20 15 10 5 0 IR DISPERSION MAP AVE:4.08uA Ct DISPERSION MAP 200 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 1cyc 8.3ms RESERVE RECOVERY TIME:trr(ns) 30 25 20 15 10 5 0 IFSM DISRESION MAP trr DISPERSION MAP AVE:10.4ns PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 100 80 60 40 Ifsm 20 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 8.3ms 8.3ms 1cyc 150 100 50 AVE:83.0A 0 200 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 1000 Mounted on epoxy board 1 IM=10mA IF=0.5A TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Rth(j-a) 0.9 0.8 FORWARD POWER DISSIPATION:Pf(W) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Sin(θ＝180) DC D=1/2 150 t 100 1ms time 300us Rth(j-c) 10 100 50 1 0 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 0.1 0.001 0.01 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1 10 100 1000 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 Rev.D 2/3 RB160M-40 Diodes 0.05 0.04 REVERSE POWER DISSIPATION:PR (W) 0.03 DC 0.02 0.01 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 40 D=1/2 Sin(θ＝180) 3 3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V DC D=1/2 Io t T VR D=t/T VR=20V Tj=150℃ 2.5 2 1.5 D=1/2 1 0.5 0 0 25 50 75 100 125 150 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 2.5 0A 0V DC Io t T VR D=t/T VR=20V Tj=150℃ 2 1.5 1 0.5 Sin(θ＝180) Sin(θ＝180) 0 25 50 75 100 125 150 0 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 5 AVE:7.30kV 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP Rev.D 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1