RB160M-40_11

Data Sheet Schottky Barrier Diode RB160M-40  Applications General rectification  Dimensions (Unit : mm) 1.6±0.1 0.1±0.1 　　　 0.05  Land size figure (Unit : mm) 1.2 0.85  Features 1)Small power mold type.（PMDU） 2)Low IR 3)High reliability 2.6±0.1 3.5±0.2 PMDU  Construction Silicon epitaxial 0.9±0.1  Structure 0.8±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date  Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.25±0.05 3.5±0.05 8.0±0.2 1.81±0.1 4.0±0.1 φ1.0±0.1 3.71±0.1 1.5MAX  Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 40 40 1 30 150 40 to 150 Unit V V A A C C (*1)Mounted on epoxy board. 180°Half sine wave  Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF IR Min. - Typ. 0.46 4.0 Max. 0.51 30 Unit V μA Conditions IF=1.0A VR=40V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.E 3.05 ① RB160M-40 Data Sheet 1000 Ta=75℃ 10000 REVERSE CURRENT:IR(uA) Ta=125℃ Ta=75℃ 1000 f=1MHz FORWARD CURRENT:IF(mA) 100 Ta=150℃ Ta=25℃ 10 Ta=-25℃ 100 10 1 0.1 0.01 0.001 0 5 10 15 20 25 30 35 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 40 Ta=-25℃ Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ 1000 100 10 1 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 480 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 470 460 450 AVE:454.3mV 440 430 Ta=25℃ VF=1A n=30pcs 30 25 20 15 10 5 0 AVE:4.08uA Ta=25℃ VR=40V n=30pcs 300 290 280 270 260 250 240 230 220 210 200 AVE:279.7pF Ta=25℃ f=1MHz VR=0V n=10pcs VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 200 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 1cyc 8.3ms 30 100 REVERSE RECOVERY TIME:trr(ns) 25 20 15 10 5 0 AVE:10.4ns PEAK SURGE FORWARD CURRENT:IFSM(A) 150 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 80 60 40 Ifsm 20 0 1 8.3ms 8.3ms 1cyc 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 100 50 AVE:83.0A 0 IFSM DISRESION MAP trr DISPERSION MAP 200 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 1000 Mounted on epoxy board IM=10mA IF=0.5A 1 Rth(j-a) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 0.9 0.8 D=1/2 DC Sin(θ＝180) 300us FORWARD POWER DISSIPATION:Pf(W) 150 t 100 1ms time 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Rth(j-c) 10 100 50 1 0 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 0.1 0.001 0.01 0.1 1 10 100 1000 0 0.5 1 1.5 2 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.E RB160M-40 Data Sheet 0.05 0.04 3 3 0A 0V DC Io t T VR D=t/T VR=20V Tj=150℃ 2.5 2 0A 0V DC D=1/2 Io t T VR D=t/T VR=20V Tj=150℃ 2.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 2 0.03 DC 0.02 0.01 0 0 10 20 30 40 D=1/2 Sin(θ＝180) 1.5 D=1/2 1 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 1.5 1 0.5 Sin(θ＝180) 0.5 0 Sin(θ＝180) 0 0 25 50 75 100 125 150 0 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 150 30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ AVE:7.30kV ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.E Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A