RB160M-60_11

Data Sheet Schottky Barrier Diode RB160M-60  Applications General rectification  Dimensions (Unit : mm) 1.6±0.1 0.1±0.1 　　　 0.05  Land size figure (Unit : mm) 1.2 0.85 2.6±0.1 3)High reliability 3.5±0.2  Features 1)Small power mold type.（PMDU） 2)Low IR ① PMDU  Construction Silicon epitaxial planar 0.9±0.1  Structure 0.8±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date  Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.25±0.05 3.5±0.05 8.0±0.2 1.81±0.1 4.0±0.1 φ1.0±0.1 3.71±0.1  Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature (*1)Mounting on epoxi board. 180°Half sine wave Symbol VRM VR Io IFSM Tj Tstg Limits 60 60 1 30 150 40 to 150 Unit V V A A C C  Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR Ct Min. - Typ. 0.49 7.0 40 Max. 0.55 50 - Unit V μA pF Conditions IF=1.0A VR=60V VR=10V , f=1MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 3.05 1.5MAX 2011.04 - Rev.E RB160M-60 Data Sheet 1 Ta=75℃ 10000 1000 Ta=125℃ 1000 f=1MHz REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=125℃ 0.1 Ta=25℃ Ta=-25℃ Ta=75℃ 100 10 1 0.1 0.01 Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 60 100 0.01 Ta=-25℃ 10 0.001 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 600 1 0 10 20 30 40 50 0 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 530 100 100 Ta=25℃ VR=60V n=30pcs 90 Ta=25℃ f=1MHz VR=10V n=10pcs FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) 70 60 50 40 30 20 10 0 AVE:6.966uA CAPACITANCE BETWEEN TERMINALS:Ct(pF) 520 510 500 490 AVE:495.1mV 480 VF DISPERSION MAP Ta=25℃ IF=1A n=30pcs 90 80 80 70 60 50 40 30 20 10 0 AVE:37.9pF IR DISPERSION MAP Ct DISPERSION MAP 150 30 100 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 100 1cyc 8.3ms 25 20 15 10 5 0 PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms 1cyc 50 50 AVE:85.0A AVE:11.7ns 0 0 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISRESION MAP 200 Mounted on epoxy board 1000 Ifsm 1.5 Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) 150 t TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) IM=10mA IF=0.5A PEAK SURGE FORWARD CURRENT:IFSM(A) 100 1ms time 300us 1 Sin(θ＝180) D=1/2 DC 100 10 Rth(j-c) 0.5 50 1 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0.01 0.1 1 10 100 1000 0 0 TIME:t(s) Rth-t CHARACTERISTICS 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.E RB160M-60 Data Sheet 0.2 3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 3 2.5 2 1.5 D=1/2 DC REVERSE POWER DISSIPATION:PR (W) 0.15 D=1/2 0.1 DC 0A 0V Io t T VR D=t/T VR=30V Tj=150℃ 2.5 0A 0V DC Io t T VR D=t/T VR=30V Tj=150℃ 2 1.5 D=1/2 1 1 0.5 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 Sin(θ＝180) 0.05 0.5 Sin(θ＝180) 0 0 10 20 30 40 Sin(θ＝180) 50 60 REVERSE VOLTAGE:VR(V) VR-PR C HARACTERISTICS 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 30 25 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ AVE:5.70kV No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.E Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A