RB160M-90

RB160M-90 Diodes Schottky barrier diode RB160M-90 Applications General rectification Dimensions (Unit : mm) 1.6±0.1 0.1±0.1 　　　 0.05 Land size figure (Unit : mm) 1.2 0.85 2.6±0.1 3.5±0.2 Features 1) Small power mold type. (PMDU) 2) Low IR 3) High reliability. PMDU Structure Construction Silicon epitaxial planar 0.9±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date 0.8±0.1 Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.25±0.05 3.5±0.05 8.0±0.2 1.81±0.1 4.0±0.1 φ1.0±0.1 3.71±0.1 1.5MAX Absolute maximum ratings (Ta=25°C) Param eter Revers e voltage (repetitive peak) Revers e voltagec(DC) Average rectified forward current Forward current s urge peak （ 60Hz・ 1cyc ） Junction tem perature Storage tem perature Mounted on epoxy board. 180 ° Harf s ine wave Sym bol VRM VR Io IFSM Tj Ts tg Lim its 90 90 1 30 150 -40 to +150 Unit V V A A ℃ ℃ Electrical characteristics (Ta=25°C) Param eter Forward voltage Revers e current S ym bol VF IR Min. Typ. Max. 0.73 100 Unit V µA IF =1.0A VR =90V Conditions 3.05 ① Rev.B 1/3 RB160M-90 Diodes Electrical characteristic curves (Ta=25°C) 1 Ta=75℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=125℃ 0.1 Ta=150℃ Ta=25℃ Ta=-25℃ Ta=150℃ 10000 1000 Ta=75℃ 100 10 1 0.1 0.01 0 100 200 300 400 500 600 700 0 10 20 30 40 50 60 70 80 90 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS Ta=25℃ Ta=125℃ 1000 条件：f=1MHz f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 0.01 Ta=-25℃ 10 0.001 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 650 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) Ta=25℃ IF=1A n=30pcs 100 90 80 70 60 50 40 30 20 10 0 VF DISPERSION MAP IR DISPERSION MAP AVE:478.3nA σ:36.1612nA 200 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ Ta=25℃ VR=90V VR=100V n=30pcs n=30pcs 190 180 170 160 150 140 130 120 110 100 Ct DISPERSION MAP 640 Ta=25℃ f=1MHz VR=0V n=10pcs 630 AVE:632.1mV 620 AVE:149.6pF 610 AVE:4.655uA 600 200 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc 8.3ms 100 30 100 PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms 1cyc 50 150 Ifsm 25 20 15 AVE:7.40ns 10 50 AVE:56.0A 0 IFSM DISRESION MAP 5 0 0 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 150 Ifsm 1000 Mounted on epoxy board IM=10mA IF=0.5A 2 Rth(j-a) t TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 100 1ms time 1.5 FORWARD POWER DISSIPATION:Pf(W) Rth(j-c) 100 300us 10 1 D=1/2 Sin(θ＝180) DC 50 1 0.5 0 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 0.1 0.001 0.01 0.1 1 10 100 1000 0 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 TIME:t(s) Rth-t CHARACTERISTICS Rev.B 2/3 RB160M-90 Diodes 1 0.8 REVERSE POWER DISSIPATION:PR (W) 0.6 DC 0.4 0.2 0 0 10 20 30 40 50 60 Sin(θ＝180) 70 80 90 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 150 D=1/2 3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 2.5 2 1.5 D=1/2 1 0.5 Sin(θ＝180) 0A 0V DC Io t T VR D=t/T VR=45V Tj=150℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 2.5 2 1.5 D=1/2 1 0.5 Sin(θ＝180) 3 0A 0V DC Io t T VR D=t/T VR=45V Tj=150℃ REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 25 20 15 10 5 0 AVE:1.70kV AVE:10.7kV ELECTROSTATIC DISCHARGE TEST ESD(KV) C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1