RB160M-90_11

Data Sheet Schottky Barrier Diode RB160M-90 Applications General rectification Dimensions (Unit : mm) 1.6±0.1 0.1±0.1 　　　 0.05 Land size figure (Unit : mm) 1.2 0.85 Features 1)Small power mold type. PMDU ） （ 2)Low IR 3)High reliability 2.6±0.1 3.5±0.2 PMDU Construction Silicon epitaxial planar 0.9±0.1 Structure 0.8±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.25±0.05 3.5±0.05 8.0±0.2 1.81±0.1 4.0±0.1 φ1.0±0.1 3.71±0.1 1.5MAX Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz 1cyc) ・ Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 90 90 1 30 150 40 to 150 Unit V V A A C C (*1)Mounted on epoxy board. 180°Half sine wave Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF IR Min. - Typ. - Max. 0.73 100 Unit V μA IF=1.0A VR=90V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.C 3.05 ① RB160M-90 Data Sheet 1 Ta=75℃ Ta=150℃ 10000 1000 Ta=125℃ 1000 条件：f=1MHz f=1MHz REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=125℃ 0.1 Ta=150℃ Ta=25℃ Ta=-25℃ Ta=75℃ 100 10 1 0.1 0.01 Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 80 90 100 0.01 Ta=-25℃ 10 0.001 0 100 200 300 400 500 600 700 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 650 100 200 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ Ta=25℃ VR=90V VR=100V n=30pcs n=30pcs FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) 640 Ta=25℃ IF=1A n=30pcs 90 80 70 60 50 40 30 20 10 AVE:478.3nA σ:36.1612nA 190 180 170 160 150 140 130 120 110 100 AVE:149.6pF Ta=25℃ f=1MHz VR=0V n=10pcs 630 AVE:632.1mV 620 610 AVE:4.655uA 600 VF DISPERSION MAP 0 IR DISPERSION MAP Ct DISPERSION MAP 200 30 100 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 150 Ifsm 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc 25 20 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms 1cyc 50 100 15 AVE:7.40ns 10 50 AVE:56.0A 0 IFSM DISPERSION MAP 5 0 0 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Ifsm 1000 Mounted on epoxy board IM=10mA IF=0.5A 2 Rth(j-a) PEAK SURGE FORWARD CURRENT:IFSM(A) t 100 1ms time 1.5 Rth(j-c) 300us FORWARD POWER DISSIPATION:Pf(W) 100 10 1 D=1/2 Sin(θ＝180) DC 10 1 0.5 1 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 0.1 0.001 0.01 0.1 1 10 100 1000 0 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.C RB160M-90 Data Sheet 1 0.8 3 2.5 2 1.5 D=1/2 1 0.5 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 Sin(θ＝180) 0A 0V DC Io t T VR D=t/T VR=45V Tj=150℃ 3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 2.5 2 1.5 1 0.5 0 0 Sin(θ＝180) 0A 0V DC D=1/2 Io t T VR D=t/T VR=45V Tj=150℃ REVERSE POWER DISSIPATION:PR (W) 0.6 DC 0.4 D=1/2 0.2 Sin(θ＝180) 0 10 20 30 40 50 60 70 80 90 0 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 150 30 25 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ AVE:10.7kV ELECTROSTATIC DISCHARGE TEST ESD(KV) AVE:1.70kV ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A