RB160SS-40

Data Sheet Schottky Barrier Diode RB160SS-40 lApplications Small current rectification lDimensions (Unit : mm) lLand size figure (Unit : mm) 0.8 1.6 ±0.05 1 .2 ±0.05 0.5 0.4 ±0.05 lFeatures 1)Small power mold type (KMD2) 2)High reliability 3)Low IR 0 ～0.03 KMD2 0.8 ±0.05 0.6 ±0.03 0.7 ±0.05 lConstruction Silicon epitaxial planer ROHM : KMD2 JEDEC :JEITA : dot (year week factory) lStructure lTaping dimensions (Unit : mm) lAbsolute maximum ratings (Ta=25C) Parameter Limits Symbol VRM Reverse voltage (repetitive peak) 40 VR Reverse voltage (DC) 40 Average rectified forward current (*1) 1 Io IFSM Forward current surge peak(60Hz･1cyc.) 5 Junction temperature 150 Tj Storage temperature -40 to +150 Tstg (*1) On the Glass epoxy substrate , 180°Half Sine wave lElectrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage Reverse current IR Unit V V A A C C Min. - Typ. 0.50 3.00 Max. 0.55 50.00 Unit V μA Conditions IF=0.7A VR=40V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.10 - Rev.A 1.2 RB160SS-40 　 Data Sheet 10 10000 Tj=150°C 1000 FORWARD CURRENT:IF(A) REVERSE CURRENT:IR(mA) 1 Tj=150°C Tj=125°C Tj=25°C Tj=75°C Tj=125°C 100 Tj=75°C 10 0.1 1 Tj=25°C 0.01 0 200 400 600 800 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0.1 0 10 20 30 40 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1000 f=1MHz Tj=25°C FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 700 Tj=25°C IF=0.7A n=20pcs 600 AVE:516.3mV 100 10 500 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 400 VF DISPERSION MAP 100 Tj=25°C VR=40V n=20pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 150 Ta=25°C f=1MHz VR=0V n=10pcs REVERSE CURRENT: IR(mA) 140 130 AVE:133.2pF 120 10 AVE:3.15mA 110 1 IR DISPERSION MAP 100 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.10 - Rev.A RB160SS-40 　 Data Sheet 30 30 Tj=25°C IF=0.1A IR=0.1A Irr=0.10×IR n=10pcs REVERSE RECOVERY TIME:trr(ns) ITS ABILITY OF PEAK SURGE FORWARD CURRENT:IFSM(A) 25 25 20 AVE:15.8A 20 15 15 AVE:8.6ns 10 10 IFSM 5 8.3ms 0 IFSM DISPERSION MAP 1cyc 5 0 trr DISPERSION MAP 100 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) 100 IFSM time 1cyc. 10 10 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1000 1.2 D.C. D=1/2 Sin(θ＝180) TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) Rth(j-a) 1 100 Rth(j-c) FORWARD POWER DISSIPATION:Pf(W) 1000 0.8 0.6 10 0.4 On glass-epoxy substrate soldering land 50mm□ 1 0.001 0.2 0 0.01 0.1 1 10 100 0 0.5 1 1.5 2 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.10 - Rev.A RB160SS-40 　 Data Sheet 2 2 0A 0V D.C. t T D=1/2 1 Sin(θ＝180) Io VR D=t/T VR=20V Tj=150°C AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 1.5 D.C. AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 50 75 100 125 150 1.5 1 D=1/2 Sin(θ＝180) 0.5 0.5 0 0 25 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) 0 0 25 50 75 100 125 150 CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 AVE：4.35kV 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A